MT18VDDT6472AG-26AG4 Micron Technology Inc, MT18VDDT6472AG-26AG4 Datasheet - Page 18

• Manufacturer Part Number: MT18VDDT6472AG-26AG4
• Description: MODULE SDRAM DDR 512MB 184DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT18VDDT6472AG-26AG4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 266MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 14: Capacitance
Note: 11; notes appear on pages 22–25
Table 15: Electrical Characteristics and Recommended AC Operating Conditions
DDR SDRAM Components Only
Notes: 1–5, 12–15, 29; notes appear on pages 22–25; 0°C
pdf: 09005aef808a331f, source: 09005aef80858037
DD18C32_64_128_256x72G.fm - Rev. E 9/04 EN
AC CHARACTERISTICS
PARAMETER
Access window of DQs from CK/CK#
CK high-level width
CK low-level width
Clock cycle time
DQ and DM input hold time relative to DQS
DQ and DM input setup time relative to DQS
DQ and DM input pulse width (for each input)
Access window of DQS from CK/CK#
DQS input high pulse width
DQS input low pulse width
DQS-DQ skew, DQS to last DQ valid, per group, per access
Write command to first DQS latching transition
DQS falling edge to CK rising - setup time
DQS falling edge from CK rising - hold time
Half clock period
Data-out high-impedance window from CK/CK#
Data-out low-impedance window from CK/CK#
Address and control input hold time (fast slew rate)
Address and control input setup time (fast slew rate)
Address and control input hold time (slow slew rate)
Address and control input setup time (slow slew rate)
Address and Control input pulse width (for each input)
LOAD MODE REGISTER command cycle time
DQ-DQS hold, DQS to first DQ to go non-valid, per access
Data hold skew factor
ACTIVE to PRECHARGE command
ACTIVE to READ with Auto precharge command
ACTIVE to ACTIVE/AUTO REFRESH command period
AUTO REFRESH command period
ACTIVE to READ or WRITE delay
PARAMETER
Input/Output Capacitance: DQ, DQS
Input Capacitance: Command and Address, S#, CKE
Input Capacitance:CK, CK#
CL = 2.5
CL = 2
512MB, 1GB
256MB, 512MB, 1GB, 2GB (x72, ECC, SR)
256MB,
2GB
T
A
18
+70°C; V
SYMBOL
t
t
CK (2.5)
t
DQSCK
t
t
t
t
t
CK (2)
DQSQ
t
DQSH
DIPW
t
t
t
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
DQSL
DQSS
t
t
t
MRD
t
t
t
QHS
t
t
DSH
t
t
t
t
RAP
RCD
t
t
IPW
RAS
t
184-PIN DDR SDRAM RDIMM
DSS
t
t
t
RFC
DD
QH
DH
AC
CH
DS
HP
HZ
IH
IH
RC
CL
IS
IS
LZ
F
S
F
S
= V
SYMBOL
DD
Q = +2.5V ±0.2V
C
C
C
7.5/10
I0
I1
I2
-0.75
-0.75
-0.75
t
t
MIN
0.45
0.45
1.75
0.35
0.35
0.75
0.90
0.90
2.20
QHS
HP -
120
7.5
0.5
0.5
0.2
0.2
15
40
15
60
75
15
1
1
t
CH,
-262
t
120,000
CL
+0.75
+0.75
+0.75
MAX
0.55
0.55
1.25
0.75
0.5
13
13
©2004 Micron Technology, Inc. All rights reserved.
MIN
2.5
4
–
UNITS
t
t
t
t
t
t
t
MAX
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
ns
CK
CK
CK
CK
CK
CK
CK
3.5
5
4
NOTES
UNITS
40, 46
40, 46
22, 23
16, 37
16, 37
22, 23
26
26
23
23
30
12
12
12
12
31
44
pF
pF
pF