MT18LSDT6472G-13ED2 Micron Technology Inc, MT18LSDT6472G-13ED2 Datasheet - Page 8
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MT18LSDT6472G-13ED2
Manufacturer Part Number
MT18LSDT6472G-13ED2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Specifications of MT18LSDT6472G-13ED2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
4831838208
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
2.43A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Electrical Specifications
Table 7:
Table 8:
Design Considerations
Component AC Timing and Operating Conditions
Table 9:
PDF: 09005aef809b161a/Source: 09005aef809b15eb
SD18C32_64_128x72.fm - Rev. E 1/08 EN
V
V
Symbol
Symbol
DD
IN
T
V
V
V
, V
V
, V
V
I
OPR
OZ
DD
I
OH
OL
IH
IL
I
OUT
DD
Q
Absolute Maximum Ratings
Operating Conditions
Module and Component Speed Grades
SDRAM components meet or exceed the listed module speed grades
Parameter/Condition
Voltage on V
Voltage on inputs, NC, or I/O pins relative to V
Parameter/Condition
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Input leakage current: Any input 0V ≤ V
(All other pins not under test = 0V)
Output leakage current: DQ pins are disabled;
0V ≤ V
Output high voltage (I
Output low voltage (I
Ambient operating temperature (commercial)
Module Speed Grade
OUT
≤ V
DD
DD
Stresses greater than those listed may cause permanent damage to the module. This is a
stress rating only, and functional operation of the module at these or any other condi-
tions above those indicated in the operational sections of this specification is not
implied. Exposure to absolute maximum rating conditions for extended periods may
adversely affect reliability.
Micron memory modules are designed to optimize signal integrity through carefully
designed terminations, controlled board impedances, routing topologies, trace length
matching, and decoupling. However, good signal integrity starts at the system level.
Micron encourages designers to simulate the signal characteristics of the system’s
memory bus to ensure adequate signal integrity of the entire memory system.
Recommended AC operating conditions are given in the SDRAM component data
sheets. Component specifications are available on Micron’s Web site. Module speed
grades correlate with component speed grades, as shown in Table 9.
-13E
-133
supply relative to V
Q
OUT
OUT
= 4mA)
256MB, 512MB, 1GB (x72, ECC, SR): 168-Pin SDRAM RDIMM
= –4mA)
SS
IN
≤ V
DD
SS
8
Micron Technology, Inc., reserves the right to change products or specifications without notice.
Address inputs,
RAS#, CAS#, WE#,
BA, CK, CKE, S#
DQMB
DQ
Component Speed Grade
Electrical Specifications
-7E
-75
Min
Min
+3.0
+2.0
+2.4
–1.0
–1.0
–0.3
–10
–5
–5
©2003 Micron Technology, Inc. All rights reserved
–
0
V
DD
Max
Max
+4.6
+4.6
+3.6
+10
+55
0.8
0.4
+5
+5
–
+ 0.3
Units
Units
µA
µA
µA
°C
V
V
V
V
V
V
V