MT18LSDT6472G-13ED2 Micron Technology Inc, MT18LSDT6472G-13ED2 Datasheet - Page 7
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MT18LSDT6472G-13ED2
Manufacturer Part Number
MT18LSDT6472G-13ED2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Specifications of MT18LSDT6472G-13ED2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168RDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
4831838208
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
2.43A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 55C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Serial Presence-Detect Operation
PDF: 09005aef809b161a/Source: 09005aef809b15eb
SD18C32_64_128x72.fm - Rev. E 1/08 EN
SDRAM modules incorporate serial presence-detect (SPD). The SPD function is imple-
mented using a 2,048-bit EEPROM. This nonvolatile storage device contains 256 bytes.
The first 128 bytes are programmed by Micron to identify the module type and various
SDRAM organizations and timing parameters. The remaining 128 bytes of storage are
available for use by the customer. System READ/WRITE operations between the master
(system logic) and the slave EEPROM device (DIMM) occur via a standard I
the DIMM’s SCL (clock) and SDA (data) signals, together with SA (2:0), which provide
eight unique DIMM/EEPROM addresses. Write protect (WP) is tied to V
module, permanently disabling hardware write protect.
256MB, 512MB, 1GB (x72, ECC, SR): 168-Pin SDRAM RDIMM
7
Micron Technology, Inc., reserves the right to change products or specifications without notice.
General Description
©2003 Micron Technology, Inc. All rights reserved
SS
on the
2
C bus using