MT18LSDT6472AG-13ED2 Micron Technology Inc, MT18LSDT6472AG-13ED2 Datasheet - Page 13

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MT18LSDT6472AG-13ED2

Manufacturer Part Number
MT18LSDT6472AG-13ED2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT18LSDT6472AG-13ED2

Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.233A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions – 256MB
Notes: 1, 5, 6; notes appear on page 18; V
Table 11: DC Electrical Characteristics and Operating Conditions – 512MB
Notes: 1, 5, 6; notes appear on page 18; V
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
PARAMETER/CONDITION
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
INPUT LEAKAGE CURRENT:
Any input 0V
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT: DQ pins are
disabled; 0V
OUTPUT LEVELS:
Output High Voltage (I
Output Low Voltage (I
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on Inputs NC or I/O Pins
Relative to V
Relative to V
V
V
DD
VIN
VIN
OUT
OUT
SS
SS
, V
. . . . . . . . . . . . . . . . . . . . . -1V to +4.6V
. . . . . . . . . . . . . . . . . . . . -1V to +4.6V
DD
V
V
V
V
OUT
OUT
DD
OUT
DD
OUT
DD
DD
Q Supply
= 4mA)
= 4mA)
Q
Q
= -4mA)
= -4mA)
DD
DD
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
, V
, V
DD
DD
Q = +3.3V ±0.3V
Q = +3.3V ±0.3V
Command and
Address Inputs,
CKE0
CK0, S0#
CK2, S2#
DQMB
DQ
Command and
Address Inputs
CKE0, CKE1
CK0, CK1, S0#, S1#
CK2, CK3, S2#, S3#
DQMB
DQ
13
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
Operating Temperature
Storage Temperature (plastic) . . . . . . -55°C to +150°C
V
SYMBOL
DD
T
T
Micron Technology, Inc., reserves the right to change products or specifications without notice.
V
SYMBOL
OPR
OPR
V
V
V
DD
, V
I
V
OZ
I
OH
OL
IH
IL
I
V
V
V
, V
V
I
DD
OZ
I
OH
OL
IH
(Commercial - ambient) . . . . .. 0°C to +65°C
(Industrial - ambient) . . . . . . .-40°C to +85°C
IL
I
DD
Q
168-PIN SDRAM UDIMM
Q
MIN
-0.3
-45
-25
-20
2.4
MIN
-5
-5
-0.3
3
2
-90
-45
-25
-20
-10
-10
2.4
3
2
V
V
DD
MAX
DD
MAX
3.6
0.8
0.4
45
25
20
3.6
0.8
0.4
5
5
90
45
25
20
10
10
+ 0.3
+ 0.3
UNITS
UNITS
©2004 Micron Technology, Inc.
µA
µA
µA
µA
µA
V
V
V
V
V
µA
µA
µA
µA
µA
µA
V
V
V
V
V
NOTES
NOTES
22
22
33
33
22
22
33
33

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