MT18LSDT6472AG-13ED2 Micron Technology Inc, MT18LSDT6472AG-13ED2 Datasheet - Page 11
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MT18LSDT6472AG-13ED2
Manufacturer Part Number
MT18LSDT6472AG-13ED2
Description
MODULE SDRAM 512MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet
1.MT18LSDT6472AG-13ED2.pdf
(26 pages)
Specifications of MT18LSDT6472AG-13ED2
Memory Type
SDRAM
Memory Size
512MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
72b
Organization
64Mx72
Total Density
512MByte
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.233A
Number Of Elements
18
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 65C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
because unknown operation or incompatibility with
future versions may result.
Write Burst Mode
M2 applies to both READ and WRITE bursts; when M9
= 1, the programmed burst length applies to READ
bursts, but write accesses are single-location (non-
burst) accesses.
09005aef807b3709
SD9_18C32_64X72AG.fm - Rev. E 11/04 EN
Test modes and reserved states should not be used
When M9 = 0, the burst length programmed via M0-
256MB (x72, ECC, SR), 512MB (x72, ECC, DR)
11
Table 8:
SPEED
-13E
-133
-10E
Micron Technology, Inc., reserves the right to change products or specifications without notice.
CAS LATENCY = 2
168-PIN SDRAM UDIMM
CAS Latency Table
CLOCK FREQUENCY (MHz)
ALLOWABLE OPERATING
133
100
100
CAS LATENCY = 3
©2004 Micron Technology, Inc.
N/A
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