MT8VDDT6464AY-335D3 Micron Technology Inc, MT8VDDT6464AY-335D3 Datasheet - Page 27

• Manufacturer Part Number: MT8VDDT6464AY-335D3
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AY-335D3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 21: Serial Presence-Detect Matrix
“1”/”0”: Serial Data, “driven to HIGH”/”driven to LOW”;notes appear on page 28
pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
0
1
2
3
4
5
6
7
8
9
Number of SPD Bytes Used by Micron
Total Number of Bytes in SPD Device
Fundamental Memory Type
Number of Row Addresses on Assembly
Number of Column Addresses on
Assembly
Number of Physical Ranks on DIMM
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
2.5) (See note 1)
SDRAM Access From Clock,
(CAS Latency = 2.5) (See note 1)
Module Configuration Type
Refrsh Rate/Type
SDRAM Device Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay, Back-to-Back
Random Column Access
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time,
2) (See note 1)
SDRAM Access From CK,
Latency = 2) (See note 1)
SDRAM Cycle Time,
1.5)
SDRAM Access From CK,
Latency = 1.5)
Minimum Row Precharge Time,
note 4)
MInimum Row Active To Row Active,
t
Minimum RAS# to CAS# Delay,
(see note 4)
Minimum RAS# Pulse Width,
(See note 2)
RRD
DESCRIPTION
t
t
t
CK, (CAS Latency =
CK, (CAS Latency =
CK (CAS Latency =
t
AC, (CAS
t
AC (CAS
t
AC,
t
RAS
t
t
RCD
RP (see
7.5ns (-335/-262/-26A)
7.5ns (-262/-26A/-265)
0.75ns(-262/-26A/-265)
15ns (-262/-26A/-265)
45ns (-262/-26A/-265)
15.6 or 7.81µs/SELF
ENTRY(VERSION)
Fast / Concurrent
20ns (-26A/-265)
20ns (-26A/-265)
AutoPrecharge
7ns (-262/-26A)
SDRAM DDR
0.70ns (-335)
7.5ns (-265)
Unbuffered
10ns (-265)
18ns (-335)
15ns (-262)
12ns (-335)
18ns (-335)
42ns (-335)
6ns (-335)
7ns (-335)
SSTL 2.5V
12 or 13
10 or 11
2, 4, 8
None
2, 2.5
128
256
64
1
0
8
1
4
0
1
27
–
–
128MB, 256MB, 512MB (x64, SR)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
MT8VDDT1664A MT8VDDT3264A MT8VDDT6464A
0C
0A
0C
C0
A0
3C
3C
2A
2D
80
08
07
01
40
00
04
60
70
75
70
75
00
80
08
00
01
0E
04
01
02
20
75
70
75
00
00
48
50
30
48
50
0D
0A
A0
2A
2D
80
08
07
01
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
30
3C
48
50
©2004 Micron Technology. Inc.
0D
A0
2A
2D
80
08
07
0B
01
40
00
04
60
70
75
70
75
00
82
08
00
01
0E
04
0C
01
02
20
C0
75
70
75
00
00
48
3C
50
30
3C
48
50