MT8VDDT6464AY-335D3 Micron Technology Inc, MT8VDDT6464AY-335D3 Datasheet - Page 26

• Manufacturer Part Number: MT8VDDT6464AY-335D3
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AY-335D3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 19: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Table 20: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
NOTE:
pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1 and the falling or rising
2. This parameter is sampled.
3. For a reSTART condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
PARAMETER/CONDITION
PARAMETER/CONDITION
SUPPLY VOLTAGE
INPUT HIGH VOLTAGE: Logic 1; All inputs
INPUT LOW VOLTAGE: Logic 0; All inputs
OUTPUT LOW VOLTAGE: I
INPUT LEAKAGE CURRENT: V
OUTPUT LEAKAGE CURRENT: V
STANDBY CURRENT: SCL = SDA = V
POWER SUPPLY CURRENT: SCL clock frequency = 100 KHz
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
edge of SDA.
the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA
remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address.
OUT
SS
SS
IN
; V
; V
= 3mA
OUT
= GND to V
DDSPD
DDSPD
DD
= GND to V
= +2.3V to +3.6V
= +2.3V to +3.6V
- 0.3V; All other inputs = V
t
WRC) is the time from a valid stop condition of a write sequence to the end of
DD
DD
26
DD
128MB, 256MB, 512MB (x64, SR)
or V
Micron Technology, Inc., reserves the right to change products or specifications without notice.
184-PIN DDR SDRAM UDIMM
SYMBOL
SS
t
t
t
t
t
HD:DAT
HD:STA
SU:DAT
SU:STA
SU:STO
t
t
t
t
HIGH
LOW
f
WRC
t
t
BUF
SCL
AA
DH
t
t
t
SYMBOL
F
R
I
V
DDSPD
Vih
V
I
V
I
I
I
LO
CC
SB
OL
LI
IL
V
MIN
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
DDSPD
0
MIN
2.3
-1
–
–
–
–
–
MAX
× 0.7 V
300
400
0.9
0.3
50
10
V
UNITS
DDSPD
DDSPD
KHz
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
MAX
©2004 Micron Technology. Inc.
3.6
0.4
10
10
30
2
+ 0.5
× 0.3
NOTES
UNITS
1
2
2
3
4
mA
µA
µA
µA
V
V
V
V