MT8VDDT6464AY-335D3 Micron Technology Inc, MT8VDDT6464AY-335D3 Datasheet - Page 13

• Manufacturer Part Number: MT8VDDT6464AY-335D3
• Description: MODULE DDR 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AY-335D3

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 333MT/s
• Package / Case: 184-DIMM
• Main Category: DRAM Module
• Sub-category: DDR SDRAM
• Module Type: 184UDIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 512Mb
• Maximum Clock Rate: 333MHz
• Operating Supply Voltage (typ): 2.5V
• Operating Current: 1.4A
• Number Of Elements: 8
• Operating Supply Voltage (max): 2.7V
• Operating Supply Voltage (min): 2.3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 184
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Absolute Maximum Ratings
nent damage to the device. This is a stress rating only,
and functional operation of the device at these or any
other conditions above those indicated in the opera-
Table 10: DC Electrical Characteristics and Operating Conditions
Notes: 1–5, 14, 48; notes appear on pages 19–22; 0°C ≤ T
Table 11: AC Input Operating Conditions
Notes: 1–5, 12, 49; notes appear on pages 19–22; 0°C ≤ T
pdf: 09005aef80867ab3, source: 09005aef80867a99
DD8C16_32_64x64AG.fm - Rev. G 9/04 EN
PARAMETER/CONDITION
Supply Voltage
I/O Supply Voltage
I/O Reference Voltage
I/O Termination Voltage (system)
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
INPUT LEAKAGE CURRENT
A
(All other pins not under test = 0V)
OUTPUT LEAKAGE CURRENT
(DQs are disabled; 0V ≤ V
OUTPUT LEVELS:
High Current (V
Low Current (V
Input High (Logic 1) Voltage
Input Low (Logic 0) Voltage
I/O Reference Voltage
NY
Stresses greater than those listed may cause perma-
Voltage on V
Voltage on V
Voltage on V
I
NPUT
Relative to V
Relative to V
Relative to V
0
V
≤ V
PARAMETER/CONDITION
OUT
REF
OUT
DD
DD
IN
≤ V
SS
SS
SS
Q Supply
= 0.373V, maximum V
Supply
and Inputs
= V
DD
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
. . . . . . . . . . . . . . . . . . . . -1V to +3.6V
DD
, V
OUT
Q-0.373V, minimum V
REF
≤ V
P
IN
DD
0
V
Q)
≤ V
IN
REF
≤ 1.35V
, maximum V
REF
, minimum V
Command/
Address, RAS#,
CAS#, WE#, S#,
CKE
CK0, CK0#
CK1, CK1#,
CK2, CK2#
DM
DQ, DQS
SYMBOL
A
A
V
VI
V
TT
REF
≤ +70°C
≤ +70°C; V
IL
H
)
(
(
AC
(
13
AC
AC
)
)
TT
)
tional sections of this specification is not implied.
Exposure to absolute maximum rating conditions for
extended periods may affect reliability.
)
128MB, 256MB, 512MB (x64, SR)
SYMBOL
Voltage on I/O Pins
Operating Temperature
Storage Temperature (plastic) . . . . . .-55°C to +150°C
Short Circuit Output Current. . . . . . . . . . . . . . . . 50mA
V
0.49 x V
DD
V
V
V
REF
V
IH
V
IL
Relative to V
T
V
I
I
DD
I
Micron Technology, Inc., reserves the right to change products or specifications without notice.
OH
REF
OZ
OL
= V
184-PIN DDR SDRAM UDIMM
DD
(
I
(
A
TT
MIN
I
DC
DC
+ 0.310
Q
(ambient) . . . . . . . . . . . . . . . . . . . . . 0°C to +70°C
–
)
)
DD
DD
Q = +2.5V ±0.2V
0.49 x V
Q
V
V
REF
REF
-16.8
MIN
16.8
-0.3
-16
2.3
2.3
-4
-6
-2
-5
+ 0.15
SS
- 0.04
0.51 x V
V
REF
DD
. . . . . . . . . . . . .-0.5V to V
MAX
Q 0.51 x V
- 0.310
–
DD
V
V
V
REF
REF
DD
Q
MAX
2.7
2.7
16
+ 0.04
4
6
2
5
–
–
- 0.15
+ 0.3
DD
UNITS
Q
V
V
V
UNITS
©2004 Micron Technology. Inc.
mA
mA
µA
µA
V
V
V
V
V
V
DD
NOTES
25, 35
25, 35
32, 36, 39
NOTES
Q +0.5V
32, 36
33, 34
6
6, 39
7, 39
25
25
47
47