MT16LSDF6464HY-133D2 Micron Technology Inc, MT16LSDF6464HY-133D2 Datasheet - Page 21

• Manufacturer Part Number: MT16LSDF6464HY-133D2
• Description: MODULE SDRAM 512MB 144-SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDF6464HY-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 20: Serial Presence-Detect Matrix (Continued)
“1”/“0”: Serial Data, “driven to HIGH”/“driven to LOW”; V
NOTE:
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
1. The value of
99–125 Manufacturer-specific data (RSVD)
36–40 Reserved
42–61 Reserved
65–71 Manufacturer’s JEDEC ID code (continued)
73–90 Module part number (ASCII)
BYTE
95-98
126
127
31
32
33
34
35
41
62
63
64
72
91
92
93
94
Module rank density
Command and address setup time,
Command and address hold time,
Data signal input setup time,
Data signal input hold time,
Device MIN ACTIVE/AUTO-REFRESH time,
SPD revision
Checksum for bytes 0-62
Manufacturer’s JEDEC ID code
Manufacturing location
PCB identification code
Identification code (continued)
Year of manufacture in BCD
Week of manufacture in BCD
Module serial number
System frequency
SDRAM component and clock detail
t
RAS used for the -13E module is calculated from
DESCRIPTION
t
DH
t
DS
t
AH,
t
AS,
t
t
CMH
CMS
t
RC
ENTRY (VERSION)
DD
100 MHz/133 MHz
128MB or 256MB
1.5ns (-13E/-133)
0.8ns (-13E/-133)
1.5ns (-13E/-133)
0.8ns (-13E/-133)
(-13E/-133/-10E)
21
= +3.3V ±0.3V
66ns (-13E)
71ns (-133)
66ns (-10E)
2ns (-10E)
1ns (-10E)
2ns (-10E)
1ns (-10E)
MICRON
REV. 2.0
(-13E)
(-133)
(-10E)
1–12
t
1–9
RC -
0
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
RP. Actual device spec value is 37ns.
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
MT16LSDF3264H
Variable Data
Variable Data
Variable Data
Variable Data
01–0C
01–09
2D
20
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
95
E1
2C
00
64
CF
FF
©2006 Micron Technology, Inc. All rights reserved.
MT16LSDF6464H
Variable Data
Variable Data
Variable Data
Variable Data
01– 0C
01–09
40
15
20
08
10
15
20
08
10
00
3C
42
46
00
02
B8
04
50
2C
00
64
CF
FF