MT16LSDF6464HG-133D2 Micron Technology Inc, MT16LSDF6464HG-133D2 Datasheet - Page 19

• Manufacturer Part Number: MT16LSDF6464HG-133D2
• Description: MODULE SDRAM 512MB 144SODIMM
• Manufacturer: Micron Technology Inc

Specifications of MT16LSDF6464HG-133D2

• Memory Type: SDRAM
• Memory Size: 512MB
• Speed: 133MHz
• Package / Case: 144-SODIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 144SODIMM
• Device Core Size: 64b
• Organization: 64Mx64
• Total Density: 512MByte
• Chip Density: 256Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.096A
• Number Of Elements: 16
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 144
• Mounting: Socket
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Table 18: Serial Presence-Detect EEPROM DC Operating Conditions
All voltages referenced to V
Table 19: Serial Presence-Detect EEPROM AC Operating Conditions
All voltages referenced to V
NOTE:
pdf: 09005aef807924d2, source: 09005aef807924f1
SDF16C32_64x64HG.fm - Rev. E 4/06 EN
1. To avoid spurious START and STOP conditions, a minimum delay is placed between SCL = 1 and the falling or rising
2. This parameter is sampled.
3. For a restart condition, or following a WRITE cycle.
4. The SPD EEPROM WRITE cycle time (
PARAMETER/CONDITION
Supply voltage
Input high voltage: Logic 1; All inputs
Input low voltage: Logic 0; All inputs
Output low voltage: I
Input leakage current: V
Output leakage current: V
Standby current: SCL = SDA = V
Power supply current: SCL clock frequency = 100 KHz
PARAMETER/CONDITION
SCL LOW to SDA data-out valid
Time the bus must be free before a new transition can start
Data-out hold time
SDA and SCL fall time
Data-in hold time
Start condition hold time
Clock HIGH period
Noise suppression time constant at SCL, SDA inputs
Clock LOW period
SDA and SCL rise time
SCL clock frequency
Data-in setup time
Start condition setup time
Stop condition setup time
WRITE cycle time
edge of SDA.
the EEPROM internal erase/program cycle. During the WRITE cycle, the EEPROM bus interface circuit is disabled, SDA
remains HIGH due to pull-up resistor, and the EEPROM does not respond to its slave address.
OUT
IN
= 3mA
OUT
= GND to V
SS
SS
; V
; V
= GND to V
DD
DDSPD
DDSPD
- 0.3V; All other inputs = GND or 3.3V ±10%
DD
= 2.3V to 3.6V
= 2.3V to 3.6V
t
WRC) is the time from a valid stop condition of a write sequence to the end of
DD
19
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SYMBOL
t
t
t
t
t
HD:DAT
HD:STA
SU:DAT
SU:STO
SU:STA
t
t
t
t
HIGH
LOW
f
WRC
t
t
BUF
SCL
AA
DH
t
t
t
R
F
I
144-PIN SDRAM SODIMM
256MB, 512MB (x64, DR)
SYMBOL
V
V
V
I
V
I
I
I
LO
CC
SB
DD
OL
LI
IH
IL
MIN
200
100
0.2
1.3
0.6
0.6
1.3
0.6
0.6
0
V
DD
MIN
MAX
–1
3
©2006 Micron Technology, Inc. All rights reserved.
–
–
–
–
–
300
400
× 0.7 V
0.9
0.3
50
10
V
UNITS
DD
DD
KHz
MAX
ms
µs
µs
ns
ns
µs
µs
µs
ns
µs
µs
ns
µs
µs
3.6
0.4
10
10
30
2
× 0.5
× 0.3
NOTES
UNITS
mA
µA
µA
µA
1
2
2
3
4
V
V
V
V