MT9LSDT1672AY-133G3 Micron Technology Inc, MT9LSDT1672AY-133G3 Datasheet - Page 22

• Manufacturer Part Number: MT9LSDT1672AY-133G3
• Description: MODULE SDRAM 128MB 168-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT9LSDT1672AY-133G3

• Memory Type: SDRAM
• Memory Size: 128MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 72b
• Organization: 16Mx72
• Total Density: 128MByte
• Chip Density: 128Mb
• Access Time (max): 6/5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.35A
• Number Of Elements: 9
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 65C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 22: Serial Presence-Detect Matrix
“1”/”0”: Serial data, “driven to HIGH”/”driven to LOW”; V
09005aef807b3709
SD9_18C16_32x72AG.fm - Rev. E 6/04 EN
BYTE
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
25
26
27
28
29
30
31
0
1
2
3
4
5
6
7
8
9
DESCRIPTION
Number of Bytes Used by Micron
Total Number of SPD Memory Bytes
Memory Type
Number of Row Addresses
Number of Column Addresses
Number of Module Ranks
Module Data Width
Module Data Width (Continued)
Module Voltage Interface Levels
SDRAM Cycle Time,
(CAS Latency = 3)
SDRAM Access From CLK,
(CAS Latency = 3)
Module Configuration Type
Refresh Rate/Type
SDRAM Width (Primary SDRAM)
Error-checking SDRAM Data Width
Minimum Clock Delay from Back-to-Back Random
Column Addresses,
Burst Lengths Supported
Number of Banks on SDRAM Device
CAS Latencies Supported
CS Latency
WE Latency
SDRAM Module Attributes
SDRAM Device Attributes: General
SDRAM Cycle Time ,
(CAS Latency = 2)
SDRAM Access from CLK,
(CAS Latency = 2)
SDRAM Cycle Time,
SDRAM Access from CLK,
Minimum Row Precharge Time,
Minimum Row Active to Row Active,
Minimum RAS# to CAS# Delay,
Minimum RAS# Pulse Width,
Module Rank Density
t
CCD
t
t
CK
t
CK (CAS Latency = 1)
CK
t
t
t
AC
AC (CAS Latency = 1)
AC
t
RAS (See note 1)
t
RCD
t
RP
128MB (x72, ECC, SR), 256MB (x72, ECC, DR)
t
RRD
DD
22
= +3.3V ±0.3V
ENTRY (VERSION)
5.4ns (-13E/-133)
10ns (-133/-10E)
20ns (-133/-10E)
20ns (-133/-10E)
1, 2, 4, 8, PAGE
6ns (-133/-10E)
15.625µs/SELF
UNBUFFERED
5.4ns (-13E)
15ns (-13E)
14ns (-13E)
15ns (-133)
20ns (-10E)
15ns (-13E)
45ns (-13E)
44ns (-133)
50ns (-10E)
7.5ns (-133
7.5ns (13E)
7ns (-13E)
8ns (-10E)
6ns (-10E)
SDRAM
128MB
LVTTL
1 or 2
128
256
ECC
2, 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
12
10
72
0E
0
8
8
1
4
0
0
168-PIN SDRAM UDIMM
MT9LSDT1672A MT18LSDT3272A
0A
A0
2D
80
08
04
0C
01
48
00
01
70
75
80
54
60
02
80
08
08
01
8F
04
06
01
01
00
0E
75
54
60
00
00
0F
14
0E
0F
14
0F
14
2C
32
20
©2004 Micron Technology, Inc.
0A
A0
2D
80
08
04
0C
02
48
00
01
75
75
80
54
60
02
80
08
08
01
8F
04
06
01
01
00
0E
75
54
60
00
00
oF
14
0E
0F
14
0F
14
2C
32
20