MT8LSDT3264AY-13ED2 Micron Technology Inc, MT8LSDT3264AY-13ED2 Datasheet - Page 15

• Manufacturer Part Number: MT8LSDT3264AY-13ED2
• Description: MODULE SDRAM 256MB 168DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8LSDT3264AY-13ED2

• Memory Type: SDRAM
• Memory Size: 256MB
• Speed: 133MHz
• Package / Case: 168-DIMM
• Main Category: DRAM Module
• Sub-category: SDRAM
• Module Type: 168UDIMM
• Device Core Size: 64b
• Organization: 32Mx64
• Total Density: 256MByte
• Chip Density: 256Mb
• Access Time (max): 5.4ns
• Maximum Clock Rate: 133MHz
• Operating Supply Voltage (typ): 3.3V
• Operating Current: 1.08A
• Number Of Elements: 8
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Operating Temp Range: 0C to 70C
• Operating Temperature Classification: Commercial
• Pin Count: 168
• Mounting: Socket
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1300; MT8LSDT3264AY-13ED2

Table 13:
Table 14:
a - Value calculated as one module bank in this condition, and all other module banks in power-down mode (I
b - Value calculated reflects all module banks in this condition.
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Parameter/Condition
Parameter/Condition
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode;CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
OPERATING CURRENT: Active Mode; Burst = 2; READ or WRITE;
t
STANDBY CURRENT: Power-Down Mode; All device device
banks idle; CKE = LOW
STANDBY CURRENT: Active Mode; CKE = HIGH; CS# = HIGH; All
device banks active after
OPERATING CURRENT: Burst Mode; Continuous burst; READ or
WRITE; All device banks active
AUTO REFRESH CURRENT
CKE = HIGH; CS# = HIGH
SELF REFRESH CURRENT: CKE ≤ 0.2V
RC =
RC =
t
t
RC (MIN)
RC (MIN)
I
Notes: 1, 5, 6, 11, 13; notes appear on page 19; V
I
Notes: 1, 6, 11, 13; notes appear on page 19; V
DD
DD
Specifications and Conditions – 256MB
Specifications and Conditions – 512MB
t
t
RCD met; No accesses in progress
RCD met; No accesses in progress
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
t
t
t
t
RFC =
RFC = 7.8125µs
RFC =
RFC = 7.8125µs
t
t
RFC (MIN)
RFC (MIN)
15
DD
DD
, V
, V
DDQ
Symbol
Symbol
DDQ
I
I
I
I
I
I
I
I
I
I
I
I
I
I
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
DD
= +3.3V ±0.3V; SDRAM component values only
Micron Technology, Inc., reserves the right to change products or specifications without notice.
1
2
3
4
5
6
7
1
2
3
4
5
6
7
= +3.3v ±0.3v; SDRAM component values only
b
b
b
b
a
a
a
1,080
1,080
2,280
1,096
1,096
4,560
-13E
-13E
320
336
16
28
20
32
56
40
MAX
1,080
1,080
2,160
MAX
1,016
1,096
4,320
-133
-133
320
336
16
28
20
32
56
40
Electrical Specifications
©2003 Micron Technology, Inc. All rights reserved.
1,080
1,080
2,160
1,016
1,096
4,320
-10E
-10E
320
336
16
28
20
32
56
40
Units
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
DD
2).
3, 18,19,
3, 18,19,
18, 19,
18, 19,
Notes
Notes
19, 22
19, 22
22, 30
19, 22
19, 22
22, 30
3, 12,
3, 18,
3, 12,
3, 18,
3, 12
3, 12
22
22
22
22
4
4