MT8LSDT3264AY-13ED2 Micron Technology Inc, MT8LSDT3264AY-13ED2 Datasheet - Page 10

MODULE SDRAM 256MB 168DIMM

MT8LSDT3264AY-13ED2

Manufacturer Part Number
MT8LSDT3264AY-13ED2
Description
MODULE SDRAM 256MB 168DIMM
Manufacturer
Micron Technology Inc
Datasheet

Specifications of MT8LSDT3264AY-13ED2

Memory Type
SDRAM
Memory Size
256MB
Speed
133MHz
Package / Case
168-DIMM
Main Category
DRAM Module
Sub-category
SDRAM
Module Type
168UDIMM
Device Core Size
64b
Organization
32Mx64
Total Density
256MByte
Chip Density
256Mb
Access Time (max)
5.4ns
Maximum Clock Rate
133MHz
Operating Supply Voltage (typ)
3.3V
Operating Current
1.08A
Number Of Elements
8
Operating Supply Voltage (max)
3.6V
Operating Supply Voltage (min)
3V
Operating Temp Range
0C to 70C
Operating Temperature Classification
Commercial
Pin Count
168
Mounting
Socket
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
557-1300
MT8LSDT3264AY-13ED2
Figure 5:
PDF: 09005aef807b3771/Source: 09005aef807b37b5
SD8_16C32_64x64AG.fm - Rev. D 3/05 EN
Mode Register Definition Diagram
M12, M11, M10 = “0, 0, 0”
to ensure compatibility
with future devices.
*Should program
12
A12
Reserved*
256MB (x64, SR), 512MB (x64, DR) 168-Pin SDRAM UDIMM
11
A11
10
A10
WB
M9
0
1
9
A9
Op Mode
8
A8
7
A7
10
Programmed Burst Length
M8
0
Single Location Access
-
CAS Latency
6
Write Burst Mode
A6
5
M7
A5
0
-
Micron Technology, Inc., reserves the right to change products or specifications without notice.
4
A4
M3
BT
M6–M0
Defined
0
1
3
A3
-
M2
M6
0
0
0
0
1
1
1
1
0
0
0
0
1
1
1
1
Burst Length
2
M1
A2
M5
0
0
1
1
0
0
1
1
0
0
1
1
0
0
1
1
M0
M4
1
0
1
0
1
0
1
0
1
Operating Mode
Standard Operation
All other states reserved
0
1
0
1
0
1
0
1
A1
Mode Register Definition
0
A0
Reserved
Reserved
Reserved
Full Page
M3 = 0
Burst Type
Interleaved
Sequential
1
2
4
8
Mode Register (Mx)
Address Bus
Burst Length
CAS Latency
Reserved
Reserved
Reserved
Reserved
Reserved
Reserved
©2003 Micron Technology, Inc. All rights reserved.
2
3
Reserved
Reserved
Reserved
Reserved
M3 = 1
1
2
4
8

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