HYS72T128420HFA-3S-B Qimonda, HYS72T128420HFA-3S-B Datasheet - Page 21

MODULE DDR2 1GB 240-DIMM

HYS72T128420HFA-3S-B

Manufacturer Part Number
HYS72T128420HFA-3S-B
Description
MODULE DDR2 1GB 240-DIMM
Manufacturer
Qimonda
Datasheet

Specifications of HYS72T128420HFA-3S-B

Memory Type
DDR2 SDRAM
Memory Size
1GB
Speed
333MHz
Package / Case
240-DIMM
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
675-1030
Notes
1. Primary channel Drive strength at 100 % with De-emphasis at -6.5 dB
2. Secondary channel drive strength at 60 % with De-emphasis at -3 dB when enabled.
3. Address and Data fields provide a 50 % toggle rate on DRAM data and link lanes.
4. Burst Length = 4.
5. 10 lanes southbound and 14 lanes northbound are enabled and active (12 lanes NB if non-ECC DIMM).
6. Modeled with 27
7. Termination is referenced to V
Rev. 1.00, 2006-10
10062006-RQWY-GI6S
Parameter
MemBIST
Over all MemBIST modes >50% DRAM BW (as dictated by the AMB)
Primary channel Enabled
Secondary channel Enabled
CKE high. Command and Address lines stable
DRAM clock active
Electrical Idle
DRAM Idle (0 BW)
Primary channel Disabled
Secondary channel Disabled
CKE low. Command and Address lines Floated
DRAM clock active, ODT and CKE driven low
termination for command, address, and clocks, and 47
TT
= V
DD
/ 2.
21
HYS72T[64/128/256]4[00/20]HFA–[3S/3.7]–B
termination for control.
Internet Data Sheet
Symbol
I
I
I
I
CC_MEMBIST
DD_MEMBIST
CC_EI
DD_EI

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