MT8VDDT6464AY-40BF4 Micron Technology Inc, MT8VDDT6464AY-40BF4 Datasheet - Page 14

• Manufacturer Part Number: MT8VDDT6464AY-40BF4
• Description: MODULE DDR SDRAM 512MB 184-DIMM
• Manufacturer: Micron Technology Inc

Specifications of MT8VDDT6464AY-40BF4

• Memory Type: DDR SDRAM
• Memory Size: 512MB
• Speed: 400MT/s
• Package / Case: 184-DIMM
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 557-1232; MT8VDDT6464AY-40BF4

Table 10:
PDF: 09005aef80a43556, Source: 09005aef80a43534
DDA8C16_32_64x64AG_2.fm - Rev. E 4/06 EN
Operating current: One device bank; Active-Precharge;
t
and control inputs changing once every two clock cycles
Operating current: One device bank; Active-Read-Pre-charge; Burst = 2;
t
changing once per clock cycle
PRECHARGE power-down standby current: All device banks idle; Power-down
mode;
Idle standby current: CS# = HIGH; All device banks idle;
HIGH; Address and other control inputs changing once per clock cycle. V
for DQ, DQS, and DM
ACTIVE power-down standby current: One device bank active; Power-down
mode;
ACTIVE standby current: CS# = HIGH; CKE = HIGH; One device bank; Active-
Precharge;
twice per clock cycle; Address and other control inputs changing once per clock
cycle
Operating current: Burst = 2; Reads; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle;
0mA
Operating current: Burst = 2; Writes; Continuous burst; One device bank active;
Address and control inputs changing once per clock cycle;
DM, and DQS inputs changing twice per clock cycle
AUTO REFRESH current
SELF REFRESH current: CKE ≤ 0.2V
Operating current: Four device bank interleaving READs (BL= 4) with auto
precharge,
change only during ACTIVE, READ, or WRITE commands
CK =
RC =
t
t
CK (MIN); DQ, DM, and DQS inputs changing once per clock cycle; Address
RC (MIN);
t
t
CK =
CK =
t
t
RC = MIN
RC =
t
t
CK (MIN); CKE = LOW
CK (MIN); CKE = LOW
I
DDR SDRAM components only
Notes: 1–5, 8, 10, 12, 30; notes appear on pages 16–18; 0°C ≤ T
DD
t
t
CK =
RAS (MAX);
Specifications and Conditions – 256MB
t
RC allowed;
t
CK (MIN); I
Parameter/Condition
t
CK =
OUT
t
t
CK =
CK (MIN); DQ, DM, and DQS inputs changing
128MB, 256MB, 512MB (x64, SR): PC3200 184-Pin DDR UDIMM
= 0mA; Address and control inputs
t
CK (MIN); Address and control inputs
t
t
RC =
CK =
t
CK =
t
CK =
14
t
t
t
t
REFC =
REFC = 7.8125µs
RC (MIN);
CK (MIN); CKE =
t
CK (MIN); I
t
CK (MIN); DQ,
t
RFC (MIN)
Micron Technology, Inc., reserves the right to change products or specifications without notice.
IN
= V
OUT
A
REF
≤ +70°C; V
=
Symbol
I
I
I
I
I
I
I
DD 4 W
I
I
DD 3 N
I
DD 5 A
I
I
DD 2 P
DD 3 P
DD 4 R
DD 2 F
DD 0
DD 1
DD 5
DD 6
DD 7
DD
Electrical Specifications
= V
DD
1,080
1,360
1,600
1,560
2,080
3,760
Max
-40B
©2005 Micron Technology, Inc. All rights reserved.
480
320
560
32
48
32
Q = +2.6V ±0.1V
Units
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
mA
15, 18, 27
15, 18, 27
Notes
14, 24
14, 25
14, 25
14, 25
14, 27
16, 27
14, 26
28
14
9