TC58V64BDC Toshiba, TC58V64BDC Datasheet - Page 24

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TC58V64BDC

Manufacturer Part Number
TC58V64BDC
Description
IC 64MBIT NAND FLASH 3V 44-TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC58V64BDC

Memory Size
8MB
Memory Type
EEPROM - Smart Media
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
APPLICATION NOTES AND COMMENTS
(1)
(2)
(3)
(4)
(5)
CE , WE , RE
Power-on/off sequence:
sequence is necessary.
power up sequence.
200
Status after power-on
Prohibition of unspecified commands
prohibited. Stored data may be corrupted if an unknown command is entered during the command cycle.
Restriction of command while Busy state
Acceptable commands after Serial Input command “80H”
Execution command “10H” or the Reset command “FFH”.
If a command other than “10H” or “FFH” is input, the Program operation is not performed.
The WP signal is useful for protecting against data corruption at power-on/off. The following timing
The WP signal may be negated any time after the V
CLE, ALE
In order to operate this device stably, after V
The following sequence is necessary because some input signals may not be stable at power-on.
The operation commands are listed in Table 3. Input of a command other than those specified in Table 3 is
During Busy state, do not input any command except 70H and FFH.
Once the Serial Input command “80H” has been input, do not input any command other than the Program
m
80
s.
Command other than
WP
0 V
“10H” or “FFH”
V
CC
XX
Power on
Don’t
V
care
IL
2.7 V
3.0 V
10
Programming cannot be
Figure 16.
Reset
FF
Figure 15. Power-on/off Sequence
CC
Operation
becomes 2.7 V, it recommends starting access after about
V
IH
For this operation the “FFH” command is
CC
reaches 2.7 V and CE signal is kept high in
Don’t
care
2001-10-24 24/33
TC58V64BDC
V
IL

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