TC58V64BDC Toshiba, TC58V64BDC Datasheet - Page 2

• Manufacturer Part Number: TC58V64BDC
• Description: IC 64MBIT NAND FLASH 3V 44-TSOP
• Manufacturer: Toshiba

Specifications of TC58V64BDC

• Memory Size: 8MB
• Memory Type: EEPROM - Smart Media
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

BLOCK DIAGRAM
ABSOLUTE MAXIMUM RATINGS
CAPACITANCE
· The products described in this document are subject to the foreign exchange and foreign trade laws.
· The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by
· The information contained herein is subject to change without notice.
RY
RY
TOSHIBA CORPORATION for any infringements of intellectual property or other rights of the third parties which may result from its
use. No license is granted by implication or otherwise under any intellectual property or other rights of TOSHIBA CORPORATION or
others.
V
V
V
P
T
T
C
C
* This parameter is periodically sampled and is not tested for every device.
CLE
CLE
I/O1
I/O1
I/O8
I/O8
ALE
ALE
/
/
WE
WE
WP
WP
stg
opr
CC
IN
I/O
D
IN
OUT
RE
RE
CE
CE
BY
BY
SYMBOL
SYMBOL
Power Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Storage Temperature
Operating Temperature
Input
Output
I/O control circuit
I/O control circuit
Logic control
Logic control
*(Ta = = = = 25°C, f = = = = 1 MHz)
RY
RY
/
/
BY
BY
PARAMETER
PARAMETER
Command register
Command register
Address register
Address register
Status register
Status register
Control circuit
Control circuit
HV generator
HV generator
CONDITION
V
V
IN
OUT
= 0 V
-0.6 V~V
= 0 V
CC
-0.6~4.6
-0.6~4.6
RATING
-20~65
0~55
MIN
+ 0.3 V (£ 4.6 V)
0.3
¾
¾
Memory cell array
Memory cell array
Column decoder
Column decoder
(embedded ID)
(embedded ID)
Extended area
Extended area
Column buffer
Column buffer
Data register
Data register
2001-10-24 2/33
Sense amp
Sense amp
TC58V64BDC
MAX
10
12
V
V
CC
CC
V
V
SS
SS
UNIT
UNIT
000707EBA2
°C
°C
pF
pF
W
V
V
V