TLP3042SCFT Toshiba, TLP3042SCFT Datasheet - Page 25
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TLP3042SCFT
Manufacturer Part Number
TLP3042SCFT
Description
PHOTOCOUPLER ZC TRIAC OUT 6-DIP
Manufacturer
Toshiba
Specifications of TLP3042SCFT
Voltage - Isolation
5000Vrms
Number Of Channels
1
Voltage - Off State
400V
Output Type
AC, Triac, Zero Cross
Current - Gate Trigger (igt) (max)
10mA
Current - Hold (ih)
600µA
Current - Dc Forward (if)
20mA
Current - Output / Channel
100mA
Mounting Type
Through Hole
Package / Case
6-DIP
Output Device
PhotoTriac
Isolation Voltage
5000 V
Peak Output Voltage (vdrm)
400 V
Maximum Input Voltage
120 VAC
Maximum Output Voltage
400 V
Minimum Trigger Current
5 mA
Configuration
1 Channel
Maximum Continuous Output Current
100 mA
Maximum Input Current
25 mA
Maximum Operating Temperature
+ 100 C
Maximum Power Dissipation
330 mW
Maximum Reverse Diode Voltage
5 V
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Zero-crossing Circuit
Yes
Number Of Elements
1
Forward Voltage
1.3V
Repetitive Peak Off-state Volt
400V
Operating Temp Range
-25C to 85C
Output Current
100mA
Package Type
PDIP
Reverse Breakdown Voltage
5V
Mounting
Through Hole
Pin Count
5
Trigger Current
5mA
Zero Crossing Circuit
Yes
Operating Temperature Classification
Commercial
Forward Current
50mA
Power Dissipation
330mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP3042(S,C,F)
TLP3042(S,C,F,T)
TLP3042SF
TLP3042(S,C,F,T)
TLP3042SF
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
Photocouplers for IGBT/MOSFET Gate Drive (Continued)
TLP557
TLP700
TLP700F
TLP700H*
TLP700HF*
TLP701
TLP701F
TLP701A*
TLP701AF*
TLP701H*
TLP701HF*
TLP705
TLP705F
TLP705A*
TLP705AF*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
6
1
6
1
6
1
6
1
6
1
6
1
6
1
7
2
5
5
5
5
5
5
5
2
2
2
2
2
2
2
: Design which meets safety standard/approval pending as of January 2011
6
3
4
3
4
3
4
3
4
3
4
3
4
3
4
3
5
4
DIP8
Direct drive of a power
transistor
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
SDIP6
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed (250 kHz)
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
SDIP6
Direct drive of a
small-power
IGBT/MOSFET
High speed
Low power dissipation
opr
opr
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.5 μs
0.7 μs
0.7 μs
0.5 μs
0.7 μs
0.2 μs
0.2 μs
5 μs
25
Constant current
output : 0.25 A
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
±0.45 A
Output
±2.0 A
±2.0 A
±0.6 A
±0.6 A
±0.6 A
±0.6 A
: Design which meets safety standard/approval pending as of January 2011
7.5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
5 mA
5 mA
8 mA
I
FHL
2500
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
Vrms
Vrms
Vrms
5000
5000
5000
5000
5000
BVs
UL/cUL TÜV
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Safety Standards
VDE
BSI
(2)
IEC