TLP3042SCFT Toshiba, TLP3042SCFT Datasheet - Page 24

PHOTOCOUPLER ZC TRIAC OUT 6-DIP

TLP3042SCFT

Manufacturer Part Number
TLP3042SCFT
Description
PHOTOCOUPLER ZC TRIAC OUT 6-DIP
Manufacturer
Toshiba
Datasheets

Specifications of TLP3042SCFT

Voltage - Isolation
5000Vrms
Number Of Channels
1
Voltage - Off State
400V
Output Type
AC, Triac, Zero Cross
Current - Gate Trigger (igt) (max)
10mA
Current - Hold (ih)
600µA
Current - Dc Forward (if)
20mA
Current - Output / Channel
100mA
Mounting Type
Through Hole
Package / Case
6-DIP
Output Device
PhotoTriac
Isolation Voltage
5000 V
Peak Output Voltage (vdrm)
400 V
Maximum Input Voltage
120 VAC
Maximum Output Voltage
400 V
Minimum Trigger Current
5 mA
Configuration
1 Channel
Maximum Continuous Output Current
100 mA
Maximum Input Current
25 mA
Maximum Operating Temperature
+ 100 C
Maximum Power Dissipation
330 mW
Maximum Reverse Diode Voltage
5 V
Minimum Operating Temperature
- 40 C
Mounting Style
Through Hole
Zero-crossing Circuit
Yes
Number Of Elements
1
Forward Voltage
1.3V
Repetitive Peak Off-state Volt
400V
Operating Temp Range
-25C to 85C
Output Current
100mA
Package Type
PDIP
Reverse Breakdown Voltage
5V
Mounting
Through Hole
Pin Count
5
Trigger Current
5mA
Zero Crossing Circuit
Yes
Operating Temperature Classification
Commercial
Forward Current
50mA
Power Dissipation
330mW
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TLP3042(S,C,F)
TLP3042(S,C,F,T)
TLP3042SF
4
Photocouplers for IGBT/MOSFET Gate Drive
*Under development. Specifications subject to change without notice. For the latest information, please contact your nearest Toshiba sales representative.
Note 1: The EN60747-5-2 safety standard for compact packages is different from that for standard DIP packages.
Note 2: BSI and IEC: : Approved (supplementary or basic insulation)
TLP151*
TLP151A*
TLP155E
TLP2451
TLP2451A*
TLP350
TLP350F
TLP350H*
TLP350HF*
TLP351
TLP351F
TLP351A*
TLP351AF*
TLP351H*
TLP351HF*
TLP352*
TLP352F*
Part Number
Since the mini-flat package is a compact package, please contact your nearest Toshiba sales representative for more details.
TÜV and VDE: : Approved
For the latest information, please contact your nearest Toshiba sales representative.
Selection Guide
EN 60065- and IEC 60065-approved, EN 60950- and IEC 60950-approved
EN 60747-5-2-approved with option V4 or D4
Pin Configuration
8
1
8
1
8
1
8
1
8
1
8
1
8
1
6
1
6
1
7
2
7
2
7
2
7
2
7
2
7
2
7
2
5
5
6
3
6
3
6
3
: Design which meets safety standard/approval pending as of January 2011
6
3
6
3
6
3
6
3
4
3
4
3
5
4
5
4
5
4
5
4
5
4
5
4
5
4
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO6 (reinforced Insulation)
T
Direct drive of a
small-power
IGBT/MOSFET
SO8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
Low power dissipation
DIP8
T
Direct drive of a
medium-power
IGBT/MOSFET
High CMR
DIP8
Direct drive of a
small-power
IGBT/MOSFET
Low power dissipation
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
T
DIP8
Direct drive of a
medium-power
IGBT/MOSFET
Low power dissipation
DIP8
T
Direct drive of a
small-power
IGBT/MOSFET
High CMR
opr
opr
opr
opr
opr
opr
= 110°C (max)
= 100°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
= 125°C (max)
Features
: Approved (reinforced insulation)
Delay Time (Max)
Propagation
0.7 μs
0.5 μs
0.2 μs
0.7 μs
0.5 μs
0.5 μs
0.5 μs
0.7 μs
0.7 μs
0.7 μs
0.2 μs
24
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
current (max):
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Peak output
Output
±0.6 A
±0.6 A
±0.6 A
±2.5 A
±2.5 A
±2.5 A
±0.6 A
±0.6 A
±6.0 A
: Design which meets safety standard/approval pending as of January 2011
5 mA
7.5 mA
5 mA
5 mA
5 mA
(Max)
5 mA
5 mA
5 mA
5 mA
I
FHL
Vrms
Vrms
Vrms
Vrms
Vrms
3750
3750
3750
3750
3750
3750
Vrms
3750
Vrms
3750
Vrms
3750
Vrms
BVs
UL/cUL TÜV
/
/
/
/
/
/
/
/
/
/
/
Safety Standards
VDE
(1)
(1)
BSI
(2)
IEC

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