H11D2 Vishay, H11D2 Datasheet - Page 5

• Manufacturer Part Number: H11D2
• Description: OPTOCOUPLER PHOTOTRANS 20% 6DIP
• Manufacturer: Vishay

Specifications of H11D2

• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 300V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 300 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 300V
• Opto Case Style: DIP
• No. Of Pins: 6
• Input Current Max: 60mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: H11D2GI; H11D2GI; H11D2VS

H11D1, H11D2, H11D3, H11D4
Vishay Semiconductors
PACKAGE DIMENSIONS in inches (millimeters)
www.vishay.com
292
ih11d1_08
ih11d1_01
100
90
80
70
60
50
40
30
20
10
0
47 Ω
0
Fig. 7 - Permissible Loss Diode
I
F
10
i178004
20
30
0.248 (6.30)
0.256 (6.50)
I
0.018 (0.45)
0.022 (0.55)
F
40 50 60 70 80 90 100
= f (T
T
(1.00)
A
0.039
min.
(°C)
A
For technical questions, contact: [e-mail]
Fig. 9 - Switching Times Measurement-Test Circuit and Waveform
typ.
)
R
4°
L
Output, with Base Connection,
I
C
Optocoupler, Phototransistor
V
V
GND
0.335 (8.50)
0.343 (8.70)
4
3
CC
O
High BV
2
5
Output
1
0.048
0.022 (0.55)
6
t pdon
10 %
50 %
90 %
Input
0.100 (2.54) typ.
0.031 (0.80) min.
CER
0.031 (0.80)
0.035 (0.90)
(0.45)
0
0
Pin one ID
0.130 (3.30)
0.150 (3.81)
Voltage
t
d
t
on
t
r
3° to 9°
ih11d1_09
400
350
300
250
200
150
100
50
Fig. 8 - Permissible Power Dissipation
0
0
0.300 to 0.347
(7.62 to 8.81)
10
ISO method A
0.300 (7.62)
0.010 (0.25)
20
t
typ.
pdoff
18°
30
t
s
typ.
P
40 50 60 70 80 90 100
tot
T
= f (T
A
Diode
t
off
(°C)
A
0.114 (2.90)
0.130 (3.0)
)
Document Number: 83611
t
Transistor
r
10 %
90 %
50 %
Rev. 1.6, 10-Dec-08