H11D2 Vishay, H11D2 Datasheet - Page 4

• Manufacturer Part Number: H11D2
• Description: OPTOCOUPLER PHOTOTRANS 20% 6DIP
• Manufacturer: Vishay

Specifications of H11D2

• Isolation Voltage: 5300 Vrms
• Number Of Channels: 1
• Input Type: DC
• Voltage - Isolation: 5300Vrms
• Current Transfer Ratio (min): 20% @ 10mA
• Voltage - Output: 300V
• Current - Output / Channel: 100mA
• Current - Dc Forward (if): 60mA
• Vce Saturation (max): 400mV
• Output Type: Transistor with Base
• Mounting Type: Through Hole
• Package / Case: 6-DIP (0.300", 7.62mm)
• Forward Current: 60 mA
• Maximum Input Diode Current: 60 mA
• Maximum Reverse Diode Voltage: 6 V
• Output Device: Transistor With Base
• Configuration: 1
• Maximum Collector Emitter Voltage: 300 V
• Maximum Collector Emitter Saturation Voltage: 400 mV
• Maximum Forward Diode Voltage: 1.5 V
• Maximum Collector Current: 100 mA
• Maximum Power Dissipation: 300 mW
• Maximum Operating Temperature: + 100 C
• Minimum Operating Temperature: - 55 C
• No. Of Channels: 1
• Optocoupler Output Type: Phototransistor
• Input Current: 10mA
• Output Voltage: 300V
• Opto Case Style: DIP
• No. Of Pins: 6
• Input Current Max: 60mA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current Transfer Ratio (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: H11D2GI; H11D2GI; H11D2VS

TYPICAL CHARACTERISTICS
T
Document Number: 83611
Rev. 1.6, 10-Dec-08
amb
= 25 °C, unless otherwise specified
ih11d1_02
ih11d1_03
ih11d1_04
17.5
12.5
1.2
1.0
0.8
0.6
0.4
0.2
1.2
1.1
1.0
0.9
7.5
2.5
20
15
10
0
5
0
10
10
10
Fig. 2 - Diode Forward Voltage (typ.)
Fig. 1 - Current Transfer Ratio (typ.)
-4
-1
-2
Fig. 3 - Output Characteristics
10
I
-1
10
CE
10
V
normalized to I
NCTR = f (I
-3
= f (V
CE
0
I
F
V
V
= 10 V,
I
(mA)
F
F
CE
10
= f (I
CE
(A)
(V)
0
, I
B
F
For technical questions, contact: [e-mail]
)
F
, T
)
10
10
A
F
-2
)
1
= 10 mA,
10
I
I
I
I
I
B
B
B
B
B
= 100 µA
= 80 µA
= 60 µA
= 40 µA
= 20 µA
1
25 °C
50 °C
75 °C
10
Output, with Base Connection,
10
10
Optocoupler, Phototransistor
-1
2
2
High BV
CER
Voltage
H11D1, H11D2, H11D3, H11D4
ih11d1_07
Fig. 6 - Collector Emitter Leakage Current (Typ.)
ih11d1_05
ih11d1_06
10
10
10
100
10
10
10
10
30
25
20
15
10
90
80
70
60
50
40
30
20
10
-10
-11
-12
5
0
Fig. 5 - Transistor Capacitances (Typ.)
0
-6
-7
-8
-9
10
10
0
-2
-2
Fig. 4 - Output Characteristics
25
C
CE
10
10
50
Vishay Semiconductors
I
-1
C
-1
CE
C
EB
f = 1 MHz,
C
C
I
CB
F
= f (V
75 100 125 150 175 200
CE
CB
= 0, R
V
V
= f (V
= f (V
I
V
CER
CE
XX
10
10
CE
CE
(V)
(V)
, I
BE
= f (V
0
0
(V)
CE
CB
F
= 1 MΩ
)
)
), C
CE
EB
)
10
10
I
I
I
I
I
= f (V
F
F
F
F
F
= 100 µA
= 80 µA
= 60 µA
= 40 µA
= 20 µA
1
1
EB
)
www.vishay.com
10
10
2
2
291