HCPL-0708-560E Avago Technologies US Inc., HCPL-0708-560E Datasheet - Page 7

OPTOCOUPLER 15MBD VDE 8-SOIC

HCPL-0708-560E

Manufacturer Part Number
HCPL-0708-560E
Description
OPTOCOUPLER 15MBD VDE 8-SOIC
Manufacturer
Avago Technologies US Inc.
Datasheet

Specifications of HCPL-0708-560E

Package / Case
8-SOIC (0.154", 3.90mm Width)
Voltage - Isolation
3750Vrms
Number Of Channels
1, Unidirectional
Current - Output / Channel
2mA
Data Rate
15MBd
Propagation Delay High - Low @ If
35ns @ 12mA
Current - Dc Forward (if)
20mA
Input Type
DC
Output Type
Push-Pull, Totem-Pole
Mounting Type
Surface Mount
Isolation Voltage
3750 Vrms
Maximum Continuous Output Current
2 mA
Maximum Fall Time
25 ns
Maximum Forward Diode Current
20 mA
Maximum Rise Time
20 ns
Minimum Forward Diode Voltage
1.3 V
Output Device
Logic Gate Photo IC
Configuration
1 Channel
Maximum Baud Rate
15 MBps
Maximum Forward Diode Voltage
1.8 V
Maximum Operating Temperature
+ 100 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
HCPL-0708-560E
Manufacturer:
AVAGO
Quantity:
40 000
Electrical Specifications
Over recommended temperature (T
All typical specifications are at T
Switching Specifications
Over recommended temperature (T
All typical specifications are at T

Parameter
Input Forward Voltage
Input Reverse
Breakdown Voltage
Logic High Output
Voltage
Logic Low Output
Voltage
Input Threshold Current
Logic Low Output
Supply Current
Logic High Output
Supply Current
Parameter
Propagation Delay Time
to Logic Low Output
Propagation Delay Time
to Logic High Output
Pulse Width
Pulse Width Distortion
Propagation Delay Skew
Output Rise Time
(10 - 90%)
Output Fall Time
(90 - 10%)
Common Mode
Transient Immunity at
Logic High Output
Common Mode
Transient Immunity at
Logic Low Output
Symbol
V
BV
V
V
I
I
I
TH
DDL
DDH
F
OH
OL
Symbol
t
t
PW
|PWD|
t
t
t
|CM
|CM
R
A
A
PHL
PLH
PSK
R
F
= 25°C, V
= 25°C, V
H
L
|
|
A
A
= –40°C to +100°C) and 4.5 V ≤ V
= –40°C to +100°C) and 4.5 V ≤ V
Min.
1.3
5
4.0
Min.
20
13
100
0
10
10
DD
DD
= +5 V.
= +5 V.
Typ.
35
21
14
20
25
15
15
Typ.
1.5
4.8
0.01
6.0
4.5
Max.
60
60
30
40
Max.
1.8
0.1
8.2
14.0
11.0
Units
ns
ns
ns
ns
ns
ns
ns
kV/µs
kV/µs
Units
V
V
V
V
mA
mA
mA
DD
DD
≤ 5.5 V.
≤ 5.5 V.
Test Conditions
I
CMOS Signal Levels
I
CMOS Signal Levels
I
CMOS Signal Levels
I
CMOS Signal Levels
I
CMOS Signal Levels
I
CMOS Signal Levels
V
I
V
I
F
F
F
F
F
F
F
F
CM
CM
= 12 mA, C
= 12 mA, C
= 12 mA, C
= 12 mA, C
= 12 mA, C
= 12 mA, C
= 0 mA
= 12 mA
Test Conditions
I
I
I
I
I
I
I
F
R
F
F
OL
F
F
= 1000 V, T
= 1000 V, T
= 12 mA
= 0, I
= 12 mA, I
= 12 mA
= 0
= 10 µA
= 20 µA
O
= –20 µA
L
L
L
L
L
L
= 15 pF
= 15 pF
= 15 pF
= 15 pF
= 15 pF
= 15 pF
A
A
O
= 25°C,
= 25°C,
= 20 µA
Fig.
5
5
2
3
4
5
Fig.
1
2
4
3
Notes
Notes
1
1
2
3
4
5

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