NCP5212AMNTXG ON Semiconductor, NCP5212AMNTXG Datasheet - Page 6
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NCP5212AMNTXG
Manufacturer Part Number
NCP5212AMNTXG
Description
IC CTLR SYNC SGL STEPDOWN 16-QFN
Manufacturer
ON Semiconductor
Type
Step-Down (Buck)r
Datasheet
1.NCP5212AMNTXG.pdf
(19 pages)
Specifications of NCP5212AMNTXG
Internal Switch(s)
No
Synchronous Rectifier
No
Number Of Outputs
1
Voltage - Output
0.8 ~ 3.3 V
Frequency - Switching
300kHz
Voltage - Input
4.5 ~ 27 V
Operating Temperature
-40°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
16-TFQFN Exposed Pad
Output Voltage
0.8 V to 3.3 V
Output Current
35 uA
Input Voltage
4.5 V to 27 V
Supply Current
35 uA
Mounting Style
SMD/SMT
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Output
-
Power - Output
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NCP5212AMNTXG
Manufacturer:
ON Semiconductor
Quantity:
12 000
Part Number:
NCP5212AMNTXG
Manufacturer:
ON/安森美
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
SUPPLY VOLTAGE
SUPPLY CURRENT
VOLTAGE−MONITOR
REFERENCE OUTPUT
2. Guaranteed by design, not tested in production.
Input Voltage
V
V
Master operation
V
Slave Operation
V
BST Quiescent Supply Current in
Master Operation
BST Quiescent Supply Current in
Slave Operation
BST Shutdown Current
VCCP Shutdown Current
VIN Supply Current
VIN Shutdown Current
Rising VCC Threshold
VCC UVLO Hysteresis
Rising VIN Threshold
VIN UVLO Hysteresis
Power Good High Threshold
Power Good High Hysteresis
Power Good Low Threshold
Power Good Low Hysteresis
Power Good High Delay
Power Good Low Delay
Output Overvoltage Rising Threshold
Overvoltage Fault Propagation Delay
Output Undervoltage Trip Threshold
Output Undervoltage Protection
Blanking Time
Internal Reference Voltage
CC
CC
CC
CC
Operating Voltage
Quiescent Supply Current in
Quiescent Supply Current in
Shutdown Current
Characteristics
(V
IVCC_Master
IBST_Master
IVCC_Slave
VPGH_HYS
IBST_Slave
VPGL_HYS
IVCCP_SD
IVCC_SD
IBST_SD
VCCHYS
OVPTblk
UVPTblk
IN
IVIN_SD
Td_PGH
VINHYS
Td_PGL
Symbol
VCCth+
OVPth+
VINth+
UVPth
VPGH
VPGL
IVIN
= 12 V, V
V
V
V
CC
ref
IN
CC
http://onsemi.com
Threshold of 0.8 V
PGOOD low hysteresis (PGOOD goes
regulation point, DH and DL are open,
Error Comparator
= V
EN = VEN_Master, V
EN = VEN_Master, V
regulation point, DH and DL are open
EN = VEN_Slave, V
EN = VEN_Disable, V
EN = VEN_Slave, V
PGOOD in from
With respect to
(PGOOD goes
PGOOD in from lower Vo (PGOOD
FB forced 2% above trip threshold
PGOOD high hysteresis (PGOOD
regulation point. DH, DL are open
regulation point, DH, DL are open
With respect to Error Comparator
Wake Up, Design Spec. (Note 2)
CCP
higher Vo
high)
= 5 V, T
EN = 0 V, V
EN = 0 V, V
EN = 5V, V
No boost trap diode
No boost trap diode
6
Threshold of 0.8 V
After Tss, (Note 2)
Test Conditions
goes high)
Shutdown
goes low)
Wake Up
EN = 0 V
(Note 2)
(Note 2)
(Note 2)
(Note 2)
A
low)
=−40°C to 85°C, unless other noted)
CCP
IN
IN
FB
FB
FB
FB
= 27 V
= 27 V
CC
NCP5212A
NCP5212A
NCP5212T
NCP5212T
forced above
forced above
= 5 V
forced above
forced above
= 5 V, True
0.7936
4.05
Min
200
200
105
120
110
125
4.5
4.5
3.4
80
75
−
8/fsw
4.25
1.25
Typ
275
500
110
125
115
130
5.0
1.5
1.5
3.8
1.5
1.5
0.8
85
−5
80
−
5
0.8064
Max
4.48
400
800
115
130
120
135
5.5
2.5
2.5
0.3
0.3
4.2
27
35
90
85
1
1
1
1
−
Unit
mA
mA
mA
mA
mV
mV
ms
mA
mA
mA
mA
mA
ms
ms
%
%
%
%
%
%
V
V
V
V
V
s