HIP6501ACB-T Intersil, HIP6501ACB-T Datasheet - Page 12

• Manufacturer Part Number: HIP6501ACB-T
• Description: IC PWM TRIPLE POWER CTRLR 16SOIC
• Manufacturer: Intersil

Specifications of HIP6501ACB-T

• Applications: Power Supply Controller
• Voltage - Supply: 5V, 12V
• Current - Supply: 20mA
• Operating Temperature: 0°C ~ 70°C
• Mounting Type: Surface Mount
• Package / Case: 16-SOIC (3.9mm Width)
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Voltage - Input: -

Q4
If a P-Channel MOSFET is used to switch the 5VSB output
of the ATX supply into the 5V
S4/S5 states (as dictated by EN5VDL status), then, similar to
the situation where Q1 is a MOSFET, the selection criteria of
this device is also proper voltage budgeting. The maximum
r
so a logic level MOSFET needs to be selected. If a PNP
device is chosen to perform this function, it has to have a low
saturation voltage while providing the maximum sleep-state
current and have a current gain sufficiently high to be
saturated using the minimum drive current (typically 20mA;
4mA during soft-start).
DS(ON)
, however, has to be achieved with only 4.5V of V
12
DUAL
output during S3 and
GS
HIP6501A
,
Q3, Q5
The two N-Channel MOSFETs are used to switch the 3.3V
and 5V inputs provided by the ATX supply into the
3.3VDUAL and 5VDUAL outputs, respectively, while in
active (S0, S1) states. Similar r
cases as well, unlike the PMOS, however, these NMOS
transistors get the benefit of an increased V
(approximately 8V and 7V, respectively).
Q2
The NPN transistor used as sleep-state pass element on the
3.3V
at V
operating temperature range.
CE
DUAL
= 1.5V, and I
output must have a minimum current gain of 100
CE
= 500mA throughout the in-circuit
DS(ON)
criteria apply in these
GS
December 30, 2004
drive
FN4749.6