MC10XS3435BPNA Freescale Semiconductor, MC10XS3435BPNA Datasheet - Page 8

• Manufacturer Part Number: MC10XS3435BPNA
• Description: IC SWITCH HIGH SIDE QUAD 24-QFN
• Manufacturer: Freescale Semiconductor
• Type: High Side Switchr

Specifications of MC10XS3435BPNA

• Number Of Outputs: 4
• Rds (on): 2 x 10 mOhm, 2 x 35 mOhm
• Internal Switch(s): Yes
• Current Limit: 5A
• Voltage - Input: 6 ~ 20 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 24-QFN
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Table 4. Static Electrical Characteristics
otherwise noted. Typical values noted reflect the approximate parameter means at T
otherwise noted.
8
10XS3435
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
POWER INPUTS
Notes
Battery Supply Voltage Range
Battery Clamp Voltage
V
Sleep State Supply Current
V
V
V
Over-voltage Shutdown Threshold
Over-voltage Shutdown Hysteresis
Under-voltage Shutdown Threshold
V
Recovery Under-voltage Threshold
V
V
10.
11.
12.
13.
Characteristics noted under conditions 6.0 V ≤ V
PWR
DD
DD
DD
PWR
DD
PWR
Fully Operational
Extended mode
Outputs commanded ON, HS[0 : 3] open,
IN[0:3] > V
Outputs commanded OFF, OFF Open-load Detection Disabled, HS[0 : 3]
shorted to the ground with V
WAKE > V
T
T
No SPI Communication
8.0 MHz SPI Communication
V
A
A
PWR
Supply Voltage
Supply Current at V
Sleep State Current at V
Supply Failure Threshold ( for V
Operating Supply Current
= 25°C
= 85°C
and V
In extended mode, the functionality is guaranteed but not the electrical parameters. From 4.0 V to 6.0 V voltage range, the device is
only protected with the thermal shutdown detection.
Measured with the outputs open.
Typical value guaranteed per design.
Output will automatically recover with time limited autoretry to instructed state when V
V
supplied by V
Supply Current
PWR
= 12V, RST = WAKE = IN[0:3] < V
DD
degradation level did not go below the under-voltage power-ON reset threshold. This applies to all internal device logic that is
IH
IH
Power on Reset Threshold
or RST > V
(10)
PWR
(11)
DD
and assumes that the external V
IH
= 5.5 V
DD
and IN[0:3] < V
Characteristic
DD
(12)
= 5.5 V
= 5.5 V
(13)
PWR
STATIC ELECTRICAL CHARACTERISTICS
> V
IL
IL
PWR(UV)
, HS[0 : 3] shorted to the ground
)
PWR
DD
supply is within specification.
≤ 20 V, 3.0 V ≤ V
V
V
V
V
I
DD
PWR(SLEEP)
SUPPLY(POR)
I
PWR(CLAMP)
PWR(OVHYS)
PWR(UV)_UP
I
V
V
DD(SLEEP)
V
I
Symbol
PWR(SBY)
V
PWR(ON)
I
PWR(OV)
PWR(UV)
DD(FAIL)
V
DD(ON)
DD(ON)
≤ 5.5 V, - 40°C ≤ T
PWR
PWR
A
= 25°C under nominal conditions unless
voltage is restored to normal as long as the
Min
6.0
4.0
3.0
0.2
3.3
0.5
3.4
2.2
41
28
–
–
–
–
–
–
–
Analog Integrated Circuit Device Data
A
≤ 125°C, GND = 0 V unless
Typ
6.5
6.5
1.0
1.6
5.0
0.8
3.9
4.1
2.5
47
32
–
–
–
–
–
–
Freescale Semiconductor
Max
7.5
5.0
5.5
2.2
5.0
1.5
4.3
0.9
4.5
2.8
20
28
53
20
30
36
–
V
PWR(UV)
Unit
mA
mA
mA
μA
μA
V
V
V
V
V
V
V
V