BTS650P Infineon Technologies, BTS650P Datasheet - Page 10

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BTS650P

Manufacturer Part Number
BTS650P
Description
SWITCH HI-SIDE CURRNT TO-220AB/7
Manufacturer
Infineon Technologies
Series
PROFET®r
Type
High Sider
Datasheet

Specifications of BTS650P

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
4.4 mOhm
Current - Output / Channel
70A
Current - Peak Output
130A
Voltage - Supply
5 V ~ 34 V
Operating Temperature
-40°C ~ 150°C
Mounting Type
Through Hole
Package / Case
TO-220-7 (Bent Leads)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BTS650PIN
SP000011287

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Inverse load current operation
The device is specified for inverse load current
operation (V
is not available during this kind of operation (I
With I
source diode is conducting resulting in considerably
increased power dissipation. If the device is switched
on (V
much lower value R
4).
Note: Temperature protection during inverse load
current operation is not possible!
Inductive load switch-off energy
dissipation
Energy stored in load inductance:
While demagnetizing load inductance, the energy
dissipated in PROFET is
with an approximate solution for R L
Infineon Technologies AG
+
-
E
V bb
AS
IN
IN
= 0), this power dissipation is decreased to the
=
= 0 (e.g. input open) only the intrinsic drain
E
I
E
V
IN
V
bb
2
AS
I
bb
L
IN
·
R
·
OUT
L
= E
L
(
V
bb
> V
bb
IN
+ E
ON(INV)
+ |V
bb
E
IN
V
L
L
> 0V). The current sense feature
IS
PROFET
- E
OUT(CL)
=
IS
V
1 /
R
PROFET
* I
bb
2
= V
·
R IS
V
IS
2
bb
L
(specifications see page
|)
·
I
R
IS
ON(CL)
I
OUT
2
L
ln
IS
(1+
E AS
OUT
Z L
0 :
·
{
|V
i
i (t)
L
L
(t) dt,
OUT(CL)
R L
I
L
L
·
V
- I
IS
R
OUT
L
L
= 0).
E
E
Page 10
|
E Load
R
)
L
+
-
Maximum allowable load inductance for
a single switch off
L = f (I L ); T j,start = 150°C, V bb = 12 V, R L = 0
L [µH]
Externally adjustable current limit
If the device is conducting, the sense current can be
used to reduce the short circuit current and allow
higher lead inductance (see diagram above). The
device will be turned off, if the threshold voltage of T2
is reached by I
R
the short circuit current is defined by I
device is shut down after t
IN
Signal
1000000
V
*C
100000
10000
V
1000
T1 will be reset. The device is turned on again,
100
10
Signal
GND
1
R
1 A
V
T1
V bb
S
*R
IS
. After a delay time defined by
IN
C
10 A
V
Data Sheet BTS650P
d(SC)
PROFET
T2
V bb
with latch function.
100 A
OUT
L(SC)
IS
2003-Oct-01
R
and the
IS
R
Power
GND
load
I L [A]
1000 A

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