E-L6207N STMicroelectronics, E-L6207N Datasheet - Page 8
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E-L6207N
Manufacturer Part Number
E-L6207N
Description
IC DRVR FULL BRDG DUAL 24-PWRDIP
Manufacturer
STMicroelectronics
Type
H Bridger
Datasheet
1.L6207D013TR.pdf
(23 pages)
Specifications of E-L6207N
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
300 mOhm
Current - Output / Channel
2.8A
Current - Peak Output
5.6A
Voltage - Supply
8 V ~ 52 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Through Hole
Package / Case
24-DIP (0.300", 7.62mm)
Operating Supply Voltage
6.5 V
Supply Current
50 mA
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4573
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
L6207
CIRCUIT DESCRIPTION
POWER STAGES and CHARGE PUMP
The L6207 integrates two independent Power MOS
Full Bridges. Each Power MOS has an Rdson =
0.3ohm (typical value @ 25°C), with intrinsic fast
freewheeling diode. Cross conduction protection is
achieved using a dead time (td = 1 s typical) be-
tween the switch off and switch on of two Power MOS
in one leg of a bridge.
Using N Channel Power MOS for the upper transis-
tors in the bridge requires a gate drive voltage above
the power supply voltage. The Bootstrapped
(VBOOT) supply is obtained through an internal Os-
cillator and few external components to realize a
charge pump circuit as shown in Figure 3. The oscil-
lator output (VCP) is a square wave at 600kHz (typi-
cal) with 10V amplitude. Recommended values/part
numbers for the charge pump circuit are shown in
Table1.
Table 1. Charge Pump External Components
Figure 3. Charge Pump Circuit
LOGIC INPUTS
Pins IN1
uC compatible logic inputs. The internal structure is
shown in Fig. 4. Typical value for turn-on and turn-off
thresholds are respectively Vthon = 1.8V and Vthoff
= 1.3V.
Pins EN
the exception that the drains of the Overcurrent and
8/23
C
C
R
D1
D2
BOOT
P
P
A
VCP
A
, IN2
and EN
Values
D1
R
C
P
P
D2
B
VBOOT
, IN1
B
have identical input structure with
C
B
BOOT
and IN2
VS
220nF
10nF
100
1N4148
1N4148
A
VS
B
B
are TTL/CMOS and
D01IN1328
V
S
thermal protection MOSFETs (one for the Bridge A
and one for the Bridge B) are also connected to these
pins. Due to these connections some care needs to
be taken in driving these pins. The EN
puts may be driven in one of two configurations as
shown in figures 5 or 6. If driven by an open drain
(collector) structure, a pull-up resistor R
pacitor C
driver is a standard Push-Pull structure the resistor
R
in Fig. 6. The resistor R
range from 2.2k
for R
More information on selecting the values is found in
the Overcurrent Protection section.
Figure 4. Logic Inputs Internal Structure
Figure 5. EN
Figure 6. EN
COLLECTOR
EN
PUSH-PULL
OUTPUT
OUTPUT
OPEN
and the capacitor C
EN
and C
EN
Driving
are connected as shown in Fig. 5. If the
A
A
EN
R
and EN
and EN
5V
EN
are respectively 100K
R
to 180K . Recommended values
PROTECTION
EN
EN
C
EN
A
EN
ESD
or EN
A
or EN
B
B
EN
EN
C
Pins Open Collector
Pins Push-Pull Driving
B
EN
B
are connected as shown
should be chosen in the
5V
D01IN1329
A
5V
EN
5V
and EN
and 5.6nF.
and a ca-
D02IN1349
D02IN1350
B
in-