E-L6207N STMicroelectronics, E-L6207N Datasheet - Page 13
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E-L6207N
Manufacturer Part Number
E-L6207N
Description
IC DRVR FULL BRDG DUAL 24-PWRDIP
Manufacturer
STMicroelectronics
Type
H Bridger
Datasheet
1.L6207D013TR.pdf
(23 pages)
Specifications of E-L6207N
Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
300 mOhm
Current - Output / Channel
2.8A
Current - Peak Output
5.6A
Voltage - Supply
8 V ~ 52 V
Operating Temperature
-25°C ~ 125°C
Mounting Type
Through Hole
Package / Case
24-DIP (0.300", 7.62mm)
Operating Supply Voltage
6.5 V
Supply Current
50 mA
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-4573
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
NON-DISSIPATIVE OVERCURRENT PROTECTION
The L6207 integrates an Overcurrent Detection Circuit (OCD). This circuit provides protection against a short
circuit to ground or between two phases of the bridge. With this internal over current detection, the external cur-
rent sense resistor normally used and its associated power dissipation are eliminated. Figure 12 shows a sim-
plified schematic of the overcurrent detection circuit.
To implement the over current detection, a sensing element that delivers a small but precise fraction of the out-
put current is implemented with each high side power MOS. Since this current is a small fraction of the output
current there is very little additional power dissipation. This current is compared with an internal reference cur-
rent I
OCD comparator signals a fault condition. When a fault condition is detected, the EN pin is pulled below the turn
off threshold (1.3V typical) by an internal open drain MOS with a pull down capability of 4mA. By using an ex-
ternal R-C on the EN pin, the off time before recovering normal operation can be easily programmed by means
of the accurate thresholds of the logic inputs.
Figure 12. Overcurrent Protection Simplified Schematic
Figure 13 shows the Overcurrent Detection operation. The Disable Time t
ation can be easily programmed by means of the accurate thresholds of the logic inputs. It is affected whether by
C
bridge when an overcurrent has been detected depends only by C
C
should be chosen as big as possible according to the maximum tolerable Delay Time and the R
be chosen according to the desired Disable Time.
The resistor R
are respectively 100K and 5.6nF that allow obtaining 200 s Disable Time.
EN
EN
and R
is also used for providing immunity to pin EN against fast transient noises. Therefore the value of C
REF
. When the output current in one bridge reaches the detection threshold (typically 5.6A) the relative
EN
values and its magnitude is reported in Figure 14. The Delay Time t
EN
C or LOGIC
+5V
should be chosen in the range from 2.2K to 180K . Recommended values for R
R
C
EN
EN
EN
A
40 TYP.
R
DS(ON)
TO GATE
LOGIC
OPEN-DRAIN
INTERNAL
POWER SENSE
COMPARATOR
1 cell
OCD
POWER DMOS
OVER TEMPERATURE
n cells
OUT1
I
1A
/ n
(I
1A
I
EN
A
REF
I
1A
+I
VS
2A
value. Its magnitude is reported in Figure 15.
+
) / n
A
I
2A
OUT2
DISABLE
I
2A
POWER DMOS
A
/ n
n cells
HIGH SIDE DMOSs OF
before recovering normal oper-
THE BRIDGE A
DELAY
D02IN1353
POWER SENSE
before turning off the
1 cell
EN
value should
EN
and C
L6207
13/23
EN
EN