VNQ830M STMicroelectronics, VNQ830M Datasheet - Page 21

IC DRIVER HISIDE QUAD 28-SOIC

VNQ830M

Manufacturer Part Number
VNQ830M
Description
IC DRIVER HISIDE QUAD 28-SOIC
Manufacturer
STMicroelectronics
Type
High Sider
Datasheet

Specifications of VNQ830M

Input Type
Non-Inverting
Number Of Outputs
4
On-state Resistance
60 mOhm
Current - Peak Output
10.5A
Voltage - Supply
5.5 V ~ 36 V
Mounting Type
Surface Mount
Package / Case
28-SOIC (7.5mm Width)
Supply Current
40 mA
Maximum Power Dissipation
6250 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 40 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNQ830M-E
Manufacturer:
ST
0
Part Number:
VNQ830M/E
Manufacturer:
ST
0
Part Number:
VNQ830M13TR
Manufacturer:
ST
0
Part Number:
VNQ830M13TR
Manufacturer:
ST
Quantity:
20 000
Part Number:
VNQ830M13TR@@@@@@@@
Manufacturer:
ST
0
Part Number:
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Manufacturer:
ST
0
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Manufacturer:
ST
Quantity:
20 000
VNQ830M
3.5
Note:
Maximum demagnetization energy (V
Figure 26. Maximum turn-off current versus load inductance
Values are generated with R
In case of repetitive pulses, T
must not exceed the temperature specified above for curves B and C.
V
IN
C= repetitive pulse at T
B= repetitive pulse at T
A = single pulse at T
, I
100
L
10
I
L M A X (A )
1
0.1
Demagnetization
Jstart
Jstart
Jstart
L
= 150ºC
jstart
= 0Ω.
= 125ºC
= 100ºC
(at beginning of each demagnetization) of every pulse
1
L(mH)
Demagnetization
CC
10
= 13.5V)
Application information
C
A
B
Demagnetization
100
21/28
t

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