VNB35N07TR-E STMicroelectronics, VNB35N07TR-E Datasheet - Page 4
![MOSFET OMNIFET 70V 35A D2PAK](/photos/1/39/13904/d2pak_sml.jpg)
VNB35N07TR-E
Manufacturer Part Number
VNB35N07TR-E
Description
MOSFET OMNIFET 70V 35A D2PAK
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet
1.VNV35N07.pdf
(13 pages)
Specifications of VNB35N07TR-E
Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
28 mOhm
Current - Peak Output
35A
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Switch Type
Low Side
Power Switch Family
VNB35N07
Input Voltage
18V
Power Switch On Resistance
35mOhm
Output Current
25A
Mounting
Surface Mount
Supply Current
250uA
Package Type
D2PAK
Pin Count
2 +Tab
Power Dissipation
125W
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
VNB35N07TR-E
Manufacturer:
ST
Quantity:
15 600
Part Number:
VNB35N07TR-E
Manufacturer:
ST
Quantity:
20 000
VNP35N07FI-VNB35N07-VNV35N07
4/13
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
supply the internal circuitry.
The device integrates:
-
-
OVERVOLTAGE
internally set at 70V, along with the rugged
avalanche
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold T
heatsink.
iss
) flows into the Input pin in order to
characteristics
Both
CLAMP
case
of
PROTECTION:
jsh
and
.
the
junction
Power
-
-
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150
restarted when the chip temperature falls
below 135
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
OVERTEMPERATURE AND SHORT CIRCUIT
STATUS FEEDBACK: In the case of an
o
C.
o
C. The device is automatically
DS(on)
).
.