VNB35N07TR-E STMicroelectronics, VNB35N07TR-E Datasheet

MOSFET OMNIFET 70V 35A D2PAK

VNB35N07TR-E

Manufacturer Part Number
VNB35N07TR-E
Description
MOSFET OMNIFET 70V 35A D2PAK
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet

Specifications of VNB35N07TR-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
28 mOhm
Current - Peak Output
35A
Mounting Type
Surface Mount
Package / Case
D²Pak, TO-263 (2 leads + tab)
Switch Type
Low Side
Power Switch Family
VNB35N07
Input Voltage
18V
Power Switch On Resistance
35mOhm
Output Current
25A
Mounting
Surface Mount
Supply Current
250uA
Package Type
D2PAK
Pin Count
2 +Tab
Power Dissipation
125W
Transistor Polarity
N Channel
Continuous Drain Current Id
18A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
28mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNB35N07TR-E
Manufacturer:
ST
Quantity:
15 600
Part Number:
VNB35N07TR-E
Manufacturer:
ST
Quantity:
20 000
BLOCK DIAGRAM ( )
( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB
June 1998
DESCRIPTION
The VNP35N07FI, VNB35N07 and VNV35N07
are
STMicroelectronics VIPower M0 Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications. Built-in
thermal shut-down, linear current limitation and
overvoltage clamp protect the chip in harsh
VNP35N07FI
VNB35N07
VNV35N07
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
TYPE
monolithic
V
70 V
70 V
70 V
clamp
FULLY AUTOPROTECTED POWER MOSFET
devices
0.028
0.028
0.028
R
DS( on)
made
35 A
35 A
35 A
I
lim
using
enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
VNB35N07/VNV35N07
ISOWATT220
D2PAK
TO-263
1
3
VNP35N07FI
”OMNIFET”:
PowerSO-10
10
1
2
3
1
1/13

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VNB35N07TR-E Summary of contents

Page 1

... DESCRIPTION The VNP35N07FI, VNB35N07 and VNV35N07 are monolithic devices made STMicroelectronics VIPower M0 Technology, intended for replacement of standard power MOSFETS KHz applications. Built-in thermal shut-down, linear current limitation and overvoltage clamp protect the chip in harsh BLOCK DIAGRAM ( ) ( ) PowerSO-10 Pin Configuration : INPUT = 6,7,8,9,10; SOURCE = 1,2,4,5; DRAIN = TAB ...

Page 2

VNP35N07FI-VNB35N07-VNV35N07 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage in I Drain Current D I Reverse DC O utput Current R V Electrostatic Discharge (C= 100 pF , R=1 esd P Total ...

Page 3

ELECTRICAL CHARACTERISTICS (continued) SWITCHING ( ) Symb ol Parameter t Turn-on Delay Time d(on) t Rise Time r t Turn-off Delay Time d( Fall T ime f t Turn-on Delay Time d(on) t Rise Time r t Turn-off ...

Page 4

VNP35N07FI-VNB35N07-VNV35N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from ...

Page 5

Thermal Impedance For ISOWATT220 Derating Curve Transconductance VNP35N07FI-VNB35N07-VNV35N07 Thermal Impedance For D2PAK / PowerSO-10 Output Characteristics Static Drain-Source On Resistance vs Input Voltage 5/13 ...

Page 6

VNP35N07FI-VNB35N07-VNV35N07 Static Drain-Source On Resistance Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature 6/13 Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature ...

Page 7

Normalized On Resistance vs Temperature Turn-on Current Slope Turn-off Drain-Source Voltage Slope VNP35N07FI-VNB35N07-VNV35N07 Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load 7/13 ...

Page 8

VNP35N07FI-VNB35N07-VNV35N07 Switching Time Resistive Load Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics 8/13 Switching Time Resistive Load Step Response Current Limit ...

Page 9

Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times VNP35N07FI-VNB35N07-VNV35N07 Fig. 2: Unclamped Inductive Waveforms Fig. 4: Input Charge Test Circuit ...

Page 10

VNP35N07FI-VNB35N07-VNV35N07 ISOWATT220 MECHANICAL DATA DIM. MIN. TYP. A 4.4 B 2.5 D 2.5 E 0.4 F 0.75 F1 1.15 F2 1.15 G 4. 28.6 L4 9 Ø 3 ¯ 10/13 ...

Page 11

TO-263 (D2PAK) MECHANICAL DATA mm DIM. MIN. TYP. A 4.3 A1 2.49 B 0.7 B2 1.25 C 0.45 C2 1. 1. VNP35N07FI-VNB35N07-VNV35N07 MAX. ...

Page 12

VNP35N07FI-VNB35N07-VNV35N07 PowerSO-10 MECHANICAL DATA DIM. MIN. TYP. A 3.35 A1 0.00 B 0.40 c 0.35 D 9.40 D1 7.40 E 9.30 E1 7.20 E2 7.20 E3 6.10 E4 5.90 e 1.27 F 1.25 H 13.80 h 0.50 L 1.20 q ...

Page 13

... STMicroelectronics. Specification mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical compone nts in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a trademark of STMicroelectronics 1998 STMicroelectronics – ...

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