VNP49N04-E STMicroelectronics, VNP49N04-E Datasheet - Page 3

• Manufacturer Part Number: VNP49N04-E
• Description: MOSFET POWER 42V 49A TO-220-3
• Manufacturer: STMicroelectronics
• Series: OMNIFET™r
• Type: Low Sider

Specifications of VNP49N04-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 20 mOhm
• Current - Peak Output: 49A
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.02 Ohms
• Forward Transconductance Gfs (max / Min): 30 S
• Drain-source Breakdown Voltage: 42 V
• Continuous Drain Current: 49 A
• Power Dissipation: 125000 mW
• Mounting Style: Through Hole
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

ELECTRICAL CHARACTERISTICS (continued)
SWITCHING (**)
SOURCE DRAIN DIODE
PROTECTION
(*) Pulsed: Pulse duration = 300 ms, duty cycle 1.5 %
(**) Parameters guaranteed by design/characterization
I
t
Symb ol
Symb ol
Symb ol
T
(di/dt)
T
E
Q
RRM
V
dl im
t
I
jsh
gf
r r
j rs
t
t
as
t
t
SD
r r
d(on)
d(of f)
d(on)
d(of f)
I
Q
lim
t
t
t
t
(**)
(**)
r
f
r
f
(**)
(**)
(**)
(**)
(**)
i
(**)
(*)
on
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall T ime
Turn-on Current Slope
Total Input Charge
Forward O n Voltage
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
Drain Current Limit
Step Response
Current Limit
Overtemperature
Shutdown
Overtemperature Reset
Fault Sink Current
Single Pulse
Avalanche Energy
Parameter
Parameter
Parameter
V
V
(see figure 3)
V
V
(see figure 3)
V
V
V
I
I
V
(see test circuit, figure 5)
V
V
V
V
V
V
starting T
V
SD
SD
DD
gen
DD
gen
DD
i n
DD
DD
i n
i n
i n
i n
i n
i n
i n
= 25 A
= 10 V
= 25 A
= 10 V
= 5 V
= 10 V
= 5 V
= 10 V
= 5 V
= 10 V R
= 15 V
= 15 V
= 15 V
= 15 V
= 30 V
= 10 V
= 10 V
j
Test Cond ition s
Test Cond ition s
Test Cond ition s
= 25
V
V
V
V
V
gen
I
di/dt = 100 A/ms
DS
DS
D
in
DS
DS
T
R
I
D
j
o
R
R
= 25 A
I
I
= 0
gen
C
d
d
= 25
= 13 V
= 13 V
= 1 KW
= 25 A
= 13 V
= 13 V
gen
gen
= 25 A
= 25 A
= 10 W
= 10 W
= 1000 W
V
o
C
DD
V
= 20 V
L = 6 mH
i n
= 10 V
Min.
Min.
Min.
150
135
30
30
4
Typ .
1300
Typ .
Typ .
200
800
300
100
250
910
1.3
3.8
6.1
7.5
12
25
49
49
35
90
50
20
Max.
Max.
Max.
1800
1200
300
450
150
1.9
5.2
8.5
1.6
14
68
68
50
VNP49N04
Un it
Un it
Un it
A/ms
mA
mA
nC
nC
o
o
ns
ns
ns
ns
ms
ms
ms
ms
ns
ms
ms
V
A
A
A
J
C
C
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