VNP49N04-E STMicroelectronics, VNP49N04-E Datasheet

MOSFET POWER 42V 49A TO-220-3

VNP49N04-E

Manufacturer Part Number
VNP49N04-E
Description
MOSFET POWER 42V 49A TO-220-3
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet

Specifications of VNP49N04-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
20 mOhm
Current - Peak Output
49A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.02 Ohms
Forward Transconductance Gfs (max / Min)
30 S
Drain-source Breakdown Voltage
42 V
Continuous Drain Current
49 A
Power Dissipation
125000 mW
Mounting Style
Through Hole
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNP49N04-E
Manufacturer:
ST
Quantity:
5 000
DESCRIPTION
The VNP49N04 is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limita-
BLOCK DIAGRAM
March 2004
VNP49N04
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-220 PACKAGE
TYPE
V
42 V
clamp
FULLY AUTOPROTECTED POWER MOSFET
R
0.02 W
DS(on)
49 A
I
l im
tion and overvoltage clamp protect the chip in
harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
TO-220
VNP49N04
OMNIFET :
1
2
3
1/11

Related parts for VNP49N04-E

VNP49N04-E Summary of contents

Page 1

... DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION The VNP49N04 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS KHz applications. Built-in thermal shut-down, linear current limita- BLOCK DIAGRAM ...

Page 2

... VNP49N04 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage in I Drain Current D I Reverse DC O utput Current R V Electrostatic Discharge (C= 100 pF , R=1.5 KW) esd P Total Dissipation Operating Junction T emperature j T Case Operating T emperature c T Storage Temperature st g THERMAL DATA R Thermal Resistance Junction-case ...

Page 3

... A/ (see test circuit, figure 5) Test Cond ition starting gen VNP49N04 Min. Typ . Max 200 300 ns 1300 1800 ns 800 1200 ns 300 450 ns ms 1.3 1.9 ms 3.8 5 6.1 8.5 25 A/ms 100 nC Min. Typ . Max 1.6 V 250 ns 910 nC 7.5 A Min. Typ . Max ...

Page 4

... VNP49N04 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from KHz. The only difference from the user s standpoint is that a small DC ...

Page 5

... Thermal Impedance Output Characteristics Static Drain-Source On Resistance vs Input Voltage Derating Curve Transconductance Static Drain-Source On Resistance VNP49N04 5/11 ...

Page 6

... VNP49N04 Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 6/11 Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature ...

Page 7

... Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load VNP49N04 7/11 ...

Page 8

... VNP49N04 Switching Time Resistive Load Step Response Current Limit 8/11 Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics ...

Page 9

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 2: Unclamped Inductive Waveforms Fig. 4: Input Charge Test Circuit Fig. 6: Waveforms VNP49N04 9/11 ...

Page 10

... VNP49N04 DIM L20 L30 P Q Package Weight 10/11 TO-220 MECHANICAL DATA mm. MIN. TYP 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2 ...

Page 11

... STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com VNP49N04 11/11 ...

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