VNP10N07-E STMicroelectronics, VNP10N07-E Datasheet - Page 4

• Manufacturer Part Number: VNP10N07-E
• Description: MOSFET OMNIFET 70V 10A TO-220
• Manufacturer: STMicroelectronics
• Series: OMNIFET™r
• Type: Low Sider

Specifications of VNP10N07-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 100 mOhm
• Current - Peak Output: 10A
• Mounting Type: Through Hole
• Package / Case: TO-220-3 (Straight Leads)
• On Resistance (max): 100 mOhms
• Maximum Power Dissipation: 50 W
• Mounting Style: Through Hole
• Supply Current: 0.25 mA
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 5A
• Drain Source Voltage Vds: 80V
• On Resistance Rds(on): 100mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Voltage - Supply: -
• Operating Temperature: -
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VNP10N07
4/11
PROTECTION FEATURES
During normal operation, the Input pin is
electrically connected to the gate of the internal
power MOSFET. The device then behaves like a
standard power MOSFET and can be used as a
switch from DC to 50 KHz. The only difference
from the user’s standpoint is that a small DC
current (I
supply the internal circuitry.
The device integrates:
-
-
OVERVOLTAGE
internally set at 70V, along with the rugged
avalanche
MOSFET stage give this device unrivalled
ruggedness and energy handling capability.
This feature is mainly important when driving
inductive loads.
LINEAR CURRENT LIMITER CIRCUIT: limits
the drain current Id to Ilim whatever the Input
pin voltage. When the current limiter is active,
the device operates in the linear region, so
power dissipation may exceed the capability of
the
temperatures increase, and if this phase lasts
long enough, junction temperature may reach
the overtemperature threshold T
heatsink.
iss
) flows into the Input pin in order to
characteristics
Both
CLAMP
case
of
PROTECTION:
jsh
and
.
the
junction
Power
-
-
Additional features of this device are ESD
protection according to the Human Body model
and the ability to be driven from a TTL Logic
circuit (with a small increase in R
OVERTEMPERATURE AND SHORT CIRCUIT
PROTECTION: these are based on sensing
the chip temperature and are not dependent on
the input voltage. The location of the sensing
element on the chip in the power stage area
ensures fast, accurate detection of the junction
temperature. Overtemperature cutout occurs at
minimum 150
restarted when the chip temperature falls
below 135
STATUS FEEDBACK: In the case of an
overtemperature fault condition, a Status
Feedback is provided through the Input pin.
The internal protection circuit disconnects the
input from the gate and connects it instead to
ground via an equivalent resistance of 100
The failure can be detected by monitoring the
voltage at the Input pin, which will be close to
ground potential.
o
C.
o
C. The device is automatically
DS(on)
).
.