VNP10N07-E STMicroelectronics, VNP10N07-E Datasheet

MOSFET OMNIFET 70V 10A TO-220

VNP10N07-E

Manufacturer Part Number
VNP10N07-E
Description
MOSFET OMNIFET 70V 10A TO-220
Manufacturer
STMicroelectronics
Series
OMNIFET™r
Type
Low Sider
Datasheet

Specifications of VNP10N07-E

Input Type
Non-Inverting
Number Of Outputs
1
On-state Resistance
100 mOhm
Current - Peak Output
10A
Mounting Type
Through Hole
Package / Case
TO-220-3 (Straight Leads)
On Resistance (max)
100 mOhms
Maximum Power Dissipation
50 W
Mounting Style
Through Hole
Supply Current
0.25 mA
Transistor Polarity
N Channel
Continuous Drain Current Id
5A
Drain Source Voltage Vds
80V
On Resistance Rds(on)
100mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Voltage - Supply
-
Operating Temperature
-
Current - Output / Channel
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
VNP10N07-E
Manufacturer:
STMicroelectronics
Quantity:
1 800
Part Number:
VNP10N07-E
Manufacturer:
ST
Quantity:
5 000
Part Number:
VNP10N07-E
Manufacturer:
ST
0
DESCRIPTION
The VNP10N07 is a monolithic device made
using STMicroelectronics VIPower Technology,
intended for replacement of standard power
MOSFETS in DC to 50 KHz applications.
Built-in thermal shut-down, linear current limi-
BLOCK DIAGRAM
March 2004
VNP10N07
LINEAR CURRENT LIMITATION
THERMAL SHUT DOWN
SHORT CIRCUIT PROTECTION
INTEGRATED CLAMP
LOW CURRENT DRAWN FROM INPUT PIN
DIAGNOSTIC FEEDBACK THROUGH INPUT
PIN
ESD PROTECTION
DIRECT ACCESS TO THE GATE OF THE
POWER MOSFET (ANALOG DRIVING)
COMPATIBLE WITH STANDARD POWER
MOSFET
STANDARD TO-220 PACKAGE
TYPE
V
70 V
clamp
FULLY AUTOPROTECTED POWER MOSFET
R
0.1
DS(on)
10 A
I
lim
tation and overvoltage clamp protect the chip
in harsh enviroments.
Fault feedback can be detected by monitoring the
voltage at the input pin.
TO-220
VNP10N07
"OMNIFET":
1
2
3
1/11

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VNP10N07-E Summary of contents

Page 1

... DIRECT ACCESS TO THE GATE OF THE POWER MOSFET (ANALOG DRIVING) COMPATIBLE WITH STANDARD POWER MOSFET STANDARD TO-220 PACKAGE DESCRIPTION The VNP10N07 is a monolithic device made using STMicroelectronics VIPower Technology, intended for replacement of standard power MOSFETS KHz applications. Built-in thermal shut-down, linear current limi- BLOCK DIAGRAM ...

Page 2

... VNP10N07 ABSOLUTE MAXIMUM RATING Symbol Parameter V Drain-source Voltage ( Input Voltage in I Drain Current D I Reverse DC Output Current R V Electrostatic Discharge (C= 100 pF, R=1 esd P Total Dissipation at T tot T Operating Junction Temperature j T Case Operating Temperature c T Storage Temperature stg THERMAL DATA R Thermal Resistance Junction-case ...

Page 3

... Test Conditions di/dt = 100 (see test circuit, figure 5) Test Conditions starting gen VNP10N07 Min. Typ. Max. Unit 50 100 ns 80 160 ns 230 400 ns 100 180 ns 600 900 1.7 2 Min. Typ. Max. Unit 1.6 V 125 ns 0.3 C 4.8 A Min. Typ. Max. Unit 150 ...

Page 4

... VNP10N07 PROTECTION FEATURES During normal operation, the Input pin is electrically connected to the gate of the internal power MOSFET. The device then behaves like a standard power MOSFET and can be used as a switch from KHz. The only difference from the user’s standpoint is that a small DC ...

Page 5

... Thermal Impedance Output Characteristics Static Drain-Source On Resistance vs Input Voltage Derating Curve Transconductance Static Drain-Source On Resistance VNP10N07 5/11 ...

Page 6

... VNP10N07 Static Drain-Source On Resistance Capacitance Variations Normalized On Resistance vs Temperature 6/11 Input Charge vs Input Voltage Normalized Input Threshold Voltage vs Temperature Normalized On Resistance vs Temperature ...

Page 7

... Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load Turn-on Current Slope Turn-off Drain-Source Voltage Slope Switching Time Resistive Load VNP10N07 7/11 ...

Page 8

... VNP10N07 Switching Time Resistive Load Step Response Current Limit 8/11 Current Limit vs Junction Temperature Source Drain Diode Forward Characteristics ...

Page 9

... Fig. 1: Unclamped Inductive Load Test Circuits Fig. 3: Switching Times Test Circuits For Resistive Load Fig. 5: Test Circuit For Inductive Load Switching And Diode Recovery Times Fig. 2: Unclamped Inductive Waveforms Fig. 4: Input Charge Test Circuit Fig. 6: Waveforms VNP10N07 9/11 ...

Page 10

... VNP10N07 DIM L20 L30 P Q Package Weight 10/11 TO-220 MECHANICAL DATA mm. MIN. TYP 4.40 0.61 1.15 0.49 15.25 10 2.40 4.95 1.23 6.20 2.40 13 3.50 16.40 28.90 3.75 2.65 1.9Gr. (Typ.) MAX. 4.60 0.88 1.70 0.70 15.75 10.40 2.70 5.15 1.32 6.60 2 ...

Page 11

... STMicroelectronics - Printed in ITALY- All Rights Reserved. Australia - Brazil - Canada - China - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. The ST logo is a trademark of STMicroelectronics STMicroelectronics GROUP OF COMPANIES http://www.st.com VNP10N07 11/11 ...

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