VN5E050MJTR-E STMicroelectronics, VN5E050MJTR-E Datasheet - Page 24

• Manufacturer Part Number: VN5E050MJTR-E
• Description: IC DVR SWITCH HI SIDE PWRSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN5E050MJTR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 50 mOhm
• Current - Peak Output: 27A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

Application information
3.1.2
3.2
3.3
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values. This shift varies depending on how many devices are ON in the case of several high
side drivers sharing the same R
If the calculated power dissipation requires the use of a large resistor, or several devices
have to share the same resistor, then ST suggests using solution 2 below.
Solution 2: diode (D
Note that a resistor (R
an inductive load.
This small signal diode can be safely shared amongst several different HSDs. Also in this
case, the presence of the ground network produces a shift (j600mV) in the input threshold
and in the status output values if the microprocessor ground is not common to the device
ground. This shift not varies if more than one HSD shares the same diode/resistor network.
Load dump protection
D
V
that are greater than the ones shown in the ISO 7637-2: 2004(E) table.
MCU I/O protection
If a ground protection network is used and negative transients are present on the V
the control pins is pulled negative. ST suggests to insert a resistor (R
the MCU I/O pins from latching up.
The value of these resistors is a compromise between the leakage current of MCU and the
current required by the HSD I/Os (Input levels compatibility) with the latch-up limit of MCU
I/Os:
-V
Calculation example:
For V
5kΩ ≤ R
Recommended values: R
CC
ld
CCpeak
is necessary (Voltage Transient Suppressor) if the load dump peak voltage exceeds the
max DC rating. The same applies if the device is subject to transients on the V
CCpeak
prot
/I
latchup
≤ 180kΩ
= - 100V and I
≤ R
prot
GND
≤ (V
prot
GND
=1kΩ) should be inserted in parallel to D
latchup
OHμC
=10kΩ, C
Doc ID 16611 Rev 1
) in the ground line
GND
-V
≥ 20mA; V
IH
.
-V
EXT
GND
=10nF.
) / I
OHµC
IHmax
≥ 4.5V
GND
prot
if the device drives
) in line to prevent
VN5E050MJ-E
CC
CC
line,
line