VN5E050MJTR-E STMicroelectronics, VN5E050MJTR-E Datasheet - Page 23

• Manufacturer Part Number: VN5E050MJTR-E
• Description: IC DVR SWITCH HI SIDE PWRSSO12
• Manufacturer: STMicroelectronics
• Type: High Sider

Specifications of VN5E050MJTR-E

• Input Type: Non-Inverting
• Number Of Outputs: 1
• On-state Resistance: 50 mOhm
• Current - Peak Output: 27A
• Voltage - Supply: 4.5 V ~ 28 V
• Operating Temperature: -40°C ~ 150°C
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Output / Channel: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant

VN5E050MJ-E
3
3.1
3.1.1
Application information
Figure 29. Application schematic
GND protection network against reverse battery
This section provides two solutions for implementing a ground protection network against
reverse battery.
Solution 1: resistor in the ground line (R
This can be used with any type of load.
The following show how to dimension the R
1.
2.
where -I
maximum rating section of the device datasheet.
Power dissipation in R
This resistor can be shared amongst several different HSDs. Please note that the value of
this resistor should be calculated with formula (1) where I
maximum on-state currents of the different devices.
Please note that, if the microprocessor ground is not shared by the device ground, then the
R
GND
R
R
P
produces a shift (I
D
+5V
GND
GND
ΜCU
= (-V
GND
≤ 600mV / (I
≥ (−V
CC
is the DC reverse ground pin current and can be found in the absolute
)
2
CC
/R
C
ext
R
) / (-I
GND
R
R
prot
prot
prot
GND
S(on)max
GND
S(on)max
(when V
)
R
Doc ID 16611 Rev 1
SENSE
CURRENT SENSE
)
CS_DIS
IINPUT
* R
CC
GND
<0 during reverse battery situations) is:
) in the input thresholds and the status output
GND
V
resistor:
GND
GND
GND
R
GND
S(on)max
only)
V
CC
D
GND
becomes the sum of the
Application information
OUTPUT
23/35
D
ld