MC33395TDWB Freescale Semiconductor, MC33395TDWB Datasheet - Page 6

• Manufacturer Part Number: MC33395TDWB
• Description: IC MOSFET PRE-DRVR 3PHASE 32SOIC
• Manufacturer: Freescale Semiconductor
• Type: 3 Phase Brushless DC Motor Controllerr

Specifications of MC33395TDWB

• Configuration: 3 Phase Bridge
• Input Type: Non-Inverting
• Delay Time: 650ns
• Number Of Configurations: 1
• Number Of Outputs: 3
• Voltage - Supply: 5.5 V ~ 24 V
• Operating Temperature: -40°C ~ 125°C
• Mounting Type: Surface Mount
• Package / Case: 32-SOIC (7.5mm Width)
• Operating Supply Voltage: - 0.3 V to + 7 V
• Supply Current: 1.8 mA
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Peak: -
• High Side Voltage - Max (bootstrap): -

Table 3. Static Electrical Characteristics
approximate parameter mean at T
6
33395
ELECTRICAL CHARACTERISTICS
STATIC ELECTRICAL CHARACTERISTICS
POWER INPUT
INPUT / OUTPUT
Notes
V
V
V
V
V
V
V
Input Current at V
Input Threshold at V
V
Comparator Input Offset Voltage
Comparator Input Bias Current
Comparator Input Offset Current
Common Mode Voltage
Comparator Differential Input Voltage
Charge Pump Voltage V
V
V
Characteristics noted under conditions -40°C ≤ T
IGN
IGNP
IGNP
IGNP
DD
DD
DD
SCRn
GDH
GDH
4.
5.
6.
LSEn, HSEn, PWM, and MODEn = 3.0 V
LSEn, HSEn, PWM, and MODEn
SRC1, SRC2, SRC3
V
V
V
V
V
V
V
V
V
IGNP
IGNP
IGNP
IGNP
IGNP
IGNP
IGNP
IGNP
IGNP
Current @ 5.5 VDC, 5.5 V ≤ V
Low-Voltage Reset Level
One-Time Fuse (Logic Supply)
Current @ 5.5 V – 24 V, V
Output Voltage with GDHn in ON State
Output Voltage with GDHn in OFF State
Logic inputs LSEn, HSEn, PWM, and MODEn have internal 20 µA internal sinks.
Guaranteed by design and characterization. Not production tested.
The Charge Pump has a positive temperature coefficient. Therefore the Min’s occur at -40°C, Typ’s at 25°C, and Max’s at 125°C.
Current @ 5.5 V – 24 V, V
Overvoltage Shutdown
Voltage
Source Sense Voltage
= 5.5 V, I
= 9.0 V, I
= 12 V, I
= 24 V, I
= 24 V, I
= 5.5 V, I
= 12 V, I
= 24 V, I
= SRCn = 14 V, I
DD
C
C
C
GDHn
GDHn
C
C
GDHn
RES
RES
RES
RES
RES
DD
= 5.5 V
Characteristic
= 5.5 V
= 5.0 mA
= 1.0 mA
= 5.0 mA
= 5.0 mA
= 5.0 mA
(5)
IGN
= 1.0 mA
= 1.0 mA
= 1.0 mA
GDHn
(6)
DD
DD
= 1.0 mA
= 5.5 V
IGNP
= 5.5 V
A
(4)
(5)
= 25°C under normal conditions unless otherwise noted.
≤ 24 V
STATIC ELECTRICAL CHARACTERISTICS
A
≤ 125°C, 5.5 V ≤ V
V
GDHn(
V
V
V
I
INP(OFFSET)
CRES
INP(OFFSET)
V
V
V
DD(RESET)
Symbol
V
GDHn(
V
INP(BIAS)
IGNP SD
V
V
I
I
I
IGNP
V
INPdiff
V DD
SCRn
on
IGNP
IGN
I
CMR
–
IN
TH
- V
)
- V
off
IGNP
SRCn
)
IGNP
≤ 24 V unless otherwise noted. Typical values reflect
-V
-500
-300
Min
-0.3
-1.0
5.5
2.5
7.0
5.0
1.0
5.0
4.0
4.0
4.5
8.0
4.5
4.0
4.0
4.5
25
–
–
–
0
DD
Analog Integrated Circuit Device Data
V
-170
Typ
-3.0
0.2
1.8
3.2
2.0
IGNP
6.0
7.5
5.2
9.0
0.6
33
12
14
10
16
12
11
–
–
–
–
–
Freescale Semiconductor
V
DD
+V
Max
36.5
100
500
300
1.0
4.0
4.0
3.0
1.0
24
25
24
20
18
18
18
18
18
18
18
18
–
- 2.0
DD
Unit
V
mA
mA
mA
mV
µA
nA
nA
V
V
V
V
V
V
V
V
V
V
DC