ISL6612CBZA-T Intersil, ISL6612CBZA-T Datasheet

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ISL6612CBZA-T

Manufacturer Part Number
ISL6612CBZA-T
Description
IC MOSFET DRVR SYNC BUCK 8-SOIC
Manufacturer
Intersil
Datasheet

Specifications of ISL6612CBZA-T

Configuration
High and Low Side, Synchronous
Input Type
PWM
Delay Time
10.0ns
Current - Peak
1.25A
Number Of Configurations
1
Number Of Outputs
2
High Side Voltage - Max (bootstrap)
36V
Voltage - Supply
10.8 V ~ 13.2 V
Operating Temperature
0°C ~ 85°C
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
ISL6612CBZA-T
Manufacturer:
ST
Quantity:
24 000
Part Number:
ISL6612CBZA-T
Manufacturer:
INTERSIL
Quantity:
20 000
Advanced Synchronous Rectified Buck
MOSFET Drivers with Protection Features
The ISL6612 and ISL6613 are high frequency MOSFET
drivers specifically designed to drive upper and lower power
N-Channel MOSFETs in a synchronous rectified buck
converter topology. These drivers combined with HIP63xx or
ISL65xx Multi-Phase Buck PWM controllers and N-Channel
MOSFETs form complete core-voltage regulator solutions for
advanced microprocessors.
The ISL6612 drives the upper gate to 12V, while the lower
gate can be independently driven over a range from 5V to
12V. The ISL6613 drives both upper and lower gates over a
range of 5V to 12V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs from
conducting simultaneously and to minimize the dead time.
These products add an overvoltage protection feature
operational before VCC exceeds its turn-on threshold, at which
the PHASE node is connected to the gate of the low side
MOSFET (LGATE). The output voltage of the converter is then
limited by the threshold of the low side MOSFET, which
provides some protection to the microprocessor if the upper
MOSFET(s) is shorted during startup. The over-temperature
protection feature prevents failures resulting from excessive
power dissipation by shutting off the outputs when its junction
temperature exceeds +150°C (typically). The driver resets once
its junction temperature returns to +108°C (typically).
These drivers also feature a three-state PWM input which,
working together with Intersil’s multi-phase PWM controllers,
prevents a negative transient on the output voltage when the
output is shut down. This feature eliminates the Schottky
diode that is used in some systems for protecting the load
from reversed output voltage events.
®
1
Data Sheet
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Pin-to-pin Compatible with HIP6601 SOIC family for Better
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
• Adjustable Gate Voltage (5V to 12V) for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 2MHz)
• Three-State PWM Input for Output Stage Shutdown
• Three-State PWM Input Hysteresis for Applications With
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Over Temperature Protection (OTP) with +42°C
• Expandable Bottom Copper Pad for Enhanced Heat
• Dual Flat No-Lead (DFN) Package
• Pb-Free Available (RoHS Compliant)
Applications
• Core Regulators for Intel® and AMD® Microprocessors
• High Current DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
• Technical Brief TB417 for Power Train Design, Layout
Performance and Extra Protection Features
- Body Diode Detection
- Auto-zero of r
- 3A Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Power Sequencing Requirement
Hysteresis
Sinking
- Near Chip-Scale Package Footprint; Improves PCB
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Guidelines, and Feedback Compensation Design
Efficiency and Thinner in Profile
Copyright Intersil Americas Inc. 2005, 2006, 2007, 2010. All Rights Reserved
All other trademarks mentioned are the property of their respective owners.
June 15, 2010
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
DS(ON)
ISL6612, ISL6613
Conduction Offset Effect
FN9153.9

Related parts for ISL6612CBZA-T

ISL6612CBZA-T Summary of contents

Page 1

... CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures. | 1-888-INTERSIL or 1-888-468-3774 Intersil (and design registered trademark of Intersil Americas Inc. Copyright Intersil Americas Inc. 2005, 2006, 2007, 2010. All Rights Reserved All other trademarks mentioned are the property of their respective owners. ISL6612, ISL6613 FN9153.9 ...

Page 2

... Ordering Information PART NUMBER MARKING ISL6612CBZ (Note 2) 6612 CBZ ISL6612CBZ-T (Notes 1, 2) 6612 CBZ ISL6612CBZA (Note 2) 6612 CBZ ISL6612CBZA-T (Notes 1, 2) 6612 CBZ ISL6612CRZ (Note 2) 612Z ISL6612CRZ-T (Notes 1, 2) 612Z ISL6612ECB-T (Note 1) ISL66 12ECB ISL6612ECBZ (Note 2) 6612 ECBZ ISL6612ECBZ-T (Notes 1, 2) ...

Page 3

Pinouts ISL6612CB, ISL6613CB (8 LD SOIC) ISL6612ECB, ISL6613ECB (8 LD EPSOIC) TOP VIEW UGATE 1 BOOT 2 GND PWM 3 GND 4 Block Diagram VCC +5V 10k PWM 8k 3 ISL6612, ISL6613 8 PHASE 7 PVCC 6 VCC 5 LGATE ...

Page 4

Typical Application - 3 Channel Converter Using ISL65xx and ISL6612 Gate Drivers +5V VCC VFB COMP PWM1 VSEN PWM2 PGOOD PWM3 MAIN CONTROL ISL65xx VID ISEN1 ISEN2 FS ISEN3 GND 4 ISL6612, ISL6613 +12V +5V TO 12V VCC BOOT UGATE ...

Page 5

... Maximum Junction Temperature (Plastic Package +150°C Maximum Storage Temperature Range . . . . . . . . . .-65°C to +150° 0.3V Pb-Free Reflow Profile .see link below DC BOOT + 0.3V http://www.intersil.com/pbfree/Pb-FreeReflow.asp BOOT 0.3V DC PVCC + 0.3V Recommended Operating Conditions PVCC Ambient Temperature Range .-40°C to +85°C < ...

Page 6

Electrical Specifications Recommended Operating Conditions, Unless Otherwise Noted. (Continued) PARAMETER Shutdown Holdoff Time UGATE Rise Time LGATE Rise Time UGATE Fall Time LGATE Fall Time UGATE Turn-On Propagation Delay (Note 7) LGATE Turn-On Propagation Delay (Note 7) UGATE Turn-Off Propagation ...

Page 7

... The Three-State PWM Input PDHL A unique feature of these drivers and other Intersil drivers is the addition of a shutdown window to the PWM input. If the PWM signal enters and remains within the shutdown window for a set holdoff time, the driver outputs are disabled and ], turning on both MOSFET gates are pulled and held low ...

Page 8

This feature helps prevent a negative transient on the output voltage when the output is shut down, eliminating the Schottky diode that is used in some systems for protecting the load from reversed output voltage events. In addition, more than ...

Page 9

EPSOIC and DFN packages, with an exposed heat escape pad, is more than 2W and 1.5W, respectively. Both EPSOIC and DFN packages are more suitable for high ...

Page 10

Package Outline Drawing L10.3x3 10 LEAD DUAL FLAT PACKAGE (DFN) Rev 6, 09/09 3.00 6 PIN 1 INDEX AREA (4X) 0.10 TOP VIEW PACKAGE OUTLINE (10 x 0.55) (10x 0.23) (8x 0.50) 1.60 TYPICAL RECOMMENDED LAND PATTERN 10 ISL6612, ISL6613 ...

Page 11

Small Outline Exposed Pad Plastic Packages (EPSOIC) N INDEX 0.25(0.010) H AREA E - TOP VIEW SEATING PLANE - -C- α 0.10(0.004) 0.25(0.010 SIDE VIEW 1 ...

Page 12

... Accordingly, the reader is cautioned to verify that data sheets are current before placing orders. Information furnished by Intersil is believed to be accurate and reliable. However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use ...

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