ISL6608 Intersil Corporation, ISL6608 Datasheet

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ISL6608

Manufacturer Part Number
ISL6608
Description
Synchronous Rectified MOSFET Driver
Manufacturer
Intersil Corporation
Datasheet

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Synchronous Rectified MOSFET Driver
The ISL6608 is a high frequency, MOSFET driver optimized
to drive two N-Channel power MOSFETs in a synchronous-
rectified buck converter topology. This driver combined with
an Intersil HIP63xx or ISL65xx Multi-Phase Buck PWM
controller forms a complete single-stage core-voltage
regulator solution with high efficiency performance at high
switching frequency for advanced microprocessors.
The IC is biased by a single low voltage supply (5V) and
minimizes low driver switching losses for high MOSFET gate
capacitance and high switching frequency applications.
Each driver is capable of driving a 3000pF load with a low
propagation delay and less than 10ns transition time. This
product implements bootstrapping on the upper gate with an
internal bootstrap Schottky diode, reducing implementation
cost, complexity, and allowing the use of higher
performance, cost effective N-Channel MOSFETs. Adaptive
shoot-through protection is integrated to prevent both
MOSFETs from conducting simultaneously.
The ISL6608 features 4A sink current for the lower gate
driver, which is capable of holding the lower MOSFET gate
during the Phase node rising edge to prevent shoot-through
power loss caused by the high dv/dt of the Phase node.
The ISL6608 also features a Three-State PWM input that,
working together with Intersil multi-phase PWM controllers,
will prevent a negative transient on the output voltage when
the output is being shut down. This feature eliminates the
Schottky diode that is usually seen in a microprocessor
power system for protecting the microprocessor from
reversed-output-voltage damage.
A diode emulation feature is integrated in the ISL6608 to
enhance converter efficiency at light load conditions. Diode
emulation also prevents a negative transient when starting
up with a pre-biased voltage on the output. When diode
emulation is enabled, the driver will allow discontinuous
conduction mode by detecting when the inductor current
reaches zero and subsequently turn off the low side
MOSFET, which will prevent the output from sinking current
and producing a negative transient on a pre-biased output
voltage (see Figures 6 and 7 on page 6).
PRELIMINARY
®
1
Data Sheet
1-888-INTERSIL or 321-724-7143
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Adaptive Shoot-Through Protection
• 0.5Ω On-Resistance and 4A Sink Current Capability
• Supports High Switching Frequency up to 2MHz
• Three-State PWM Input for Power Stage Shutdown
• Internal Bootstrap Schottky Diode
• Low Bias Supply Current (5V, 80µA)
• Diode Emulation for Enhanced Light Load Efficiency and
• VCC POR (Power-On-Reset) Feature Integrated
• Low Three-State Shutdown Holdoff Time (Typical 160ns)
• Pin-to-pin Compatible with ISL6605
• QFN Package:
Applications
• Core Voltage Supplies for Intel® and AMD®
• High Frequency Low Profile DC-DC Converters
• High Current Low Voltage DC-DC Converters
Related Literature
• Technical Brief TB363 “Guidelines for Handling and
• Technical Brief TB389 “PCB Land Pattern Design and
Ordering Information
ISL6608CB
ISL6608CB-T
ISL6608CR
ISL6608CR-T
PART NUMBER
- Fast Output Rise and Fall Time
- Low Propagation Delay
Pre-Biased Startup Applications
- Compliant to JEDEC PUB95 MO-220
- Near Chip Scale Package Footprint, which Improves
- Enhanced Thermal Performance
Microprocessors
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Surface Mount Guidelines for MLFP Packages”
QFN - Quad Flat No Leads - Package Outline
PCB Efficiency and Has a Thinner Profile
December 2003
All other trademarks mentioned are the property of their respective owners.
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
Copyright © Intersil Americas Inc. 2003. All Rights Reserved
8 Ld SOIC Tape and Reel
8 Ld 3x3 QFN Tape and Reel
TEMP. RANGE
0 to 70
0 to 70
(
o
C)
8 Ld SOIC
8 Ld 3x3 QFN L8.3x3
PACKAGE
ISL6608
FN9140
M8.15
DWG. #
PKG.

Related parts for ISL6608

ISL6608 Summary of contents

Page 1

... Schottky diode that is usually seen in a microprocessor power system for protecting the microprocessor from reversed-output-voltage damage. A diode emulation feature is integrated in the ISL6608 to enhance converter efficiency at light load conditions. Diode emulation also prevents a negative transient when starting up with a pre-biased voltage on the output. When diode ...

Page 2

... Pinouts ISL6608CB (SOIC) TOP VIEW UGATE 1 BOOT 2 PWM 3 GND 4 Block Diagram VCC FCCM PWM 2 ISL6608 8 PHASE 7 FCCM 6 VCC 5 LGATE ISL6608 SHOOT- THROUGH PROTECTION CONTROL LOGIC 10K THERMAL PAD (FOR QFN PACKAGE ONLY) ISL6608CR (QFN) TOP VIEW BOOT 1 6 FCCM PWM ...

Page 3

... Typical Application - Multi-Phase Converter Using ISL6608 Gate Drivers +5V +5V FB COMP VCC VSEN PWM1 PWM2 PGOOD FCCM MAIN CONTROL ISEN1 VID ISEN2 FS DACOUT GND 3 ISL6608 V BAT +5V VCC BOOT UGATE FCCM PWM PHASE DRIVE ISL6608 LGATE THERMAL PAD V BAT +5V VCC BOOT UGATE FCCM ...

Page 4

... FCCM LOW Threshold FCCM HIGH Threshold SWITCHING TIME UGATE Rise Time LGATE Rise Time UGATE Fall Time LGATE Fall Time 4 ISL6608 Thermal Information Thermal Resistance (Typical, Notes 2, 3, 4)θ SOIC Package (Note 0.3V BOOT QFN Package (Notes 3, 4 ...

Page 5

... GND (Pin 4 for SOIC-8, Pin 3 for QFN) GND is the ground pin for the IC. LGATE (Pin 5 for SOIC-8, Pin 4 for QFN) LGATE is the lower gate drive output. Connect to gate of the low-side power N-Channel MOSFET. 5 ISL6608 SYMBOL TEST CONDITIONS 5V, Outputs Unloaded PDLU ...

Page 6

... Description Theory of Operation Designed for speed, the ISL6608 dual MOSFET driver controls both high-side and low-side N-Channel FETs from one externally provided PWM signal. A rising edge on PWM initiates the turn-off of the lower MOSFET (see Figure 1, Timing Diagram). After a short propagation delay [t ], the lower gate begins to fall ...

Page 7

... FIGURE 2. LOAD TRANSIENT (0 to 30A, 3-PHASE) FIGURE 4. DCM TO CCM TRANSITION AT NO LOAD INDUCTOR CURRENT VOUT FIGURE 6. PRE-BIASED STARTUP IN CCM MODE (FCCM = HI) 7 ISL6608 FIGURE 3. LOAD TRANSIENT (30 to 0A, 3-PHASE) FIGURE 5. CCM TO DCM TRANSITION AT NO LOAD INDUCTOR CURRENT VOUT FIGURE 7. PRE-BIASED STARTUP IN DCM MODE (FCCM = LO) ...

Page 8

... DS(ON) MOSFET can cause gross current measurement inaccuracies. Three-State PWM Input A unique feature of the ISL6608 and other Intersil drivers is the addition of a shutdown window to the PWM input. If the PWM signal enters and remains within the shutdown window for a set holdoff time (typical 160ns), the output drivers are disabled and both MOSFET gates are pulled and held low ...

Page 9

... FREQUENCY (kHz) FIGURE 9. POWER DISSIPATION vs FREQUENCY 9 ISL6608 Layout Consideration For heat spreading, place copper underneath the IC whether it has an exposed pad or not. The copper area can be extended beyond the bottom area of the IC and/or connected to buried copper plane(s) with thermal vias. This ...

Page 10

... Quad Flat No-Lead Plastic Package (QFN) Micro Lead Frame Plastic Package (MLFP) 10 ISL6608 L8.3x3 8 LEAD QUAD FLAT NO-LEAD PLASTIC PACKAGE (COMPLIANT TO JEDEC MO-220VEEC ISSUE C) MILLIMETERS SYMBOL MIN NOMINAL A 0. 0.23 D 3.00 BSC D1 2.75 BSC D2 0.25 E 3.00 BSC E1 2.75 BSC E2 0. 0. θ ...

Page 11

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 11 ISL6608 M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC ...

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