ISL6615 INTERSIL [Intersil Corporation], ISL6615 Datasheet

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ISL6615

Manufacturer Part Number
ISL6615
Description
High-Frequency 6A Sink Synchronous MOSFET Drivers with Protection Features
Manufacturer
INTERSIL [Intersil Corporation]
Datasheet

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High-Frequency 6A Sink Synchronous
MOSFET Drivers with Protection Features
The ISL6615 is a high-speed MOSFET driver optimized to
drive upper and lower power N-Channel MOSFETs in a
synchronous rectified buck converter topology. This driver,
combined with an Intersil Digital or Analog multiphase PWM
controller, forms a complete high frequency and high
efficiency voltage regulator.
The ISL6615 drives both upper and lower gates over a range
of 4.5V to 13.2V. This drive-voltage provides the flexibility
necessary to optimize applications involving trade-offs
between gate charge and conduction losses.
The ISL6615 features 6A typical sink current for the low-side
gate driver, enhancing the lower MOSFET gate hold-down
capability during PHASE node rising edge, preventing power
loss caused by the self turn-on of the lower MOSFET due to
the high dV/dt of the switching node.
An advanced adaptive zero shoot-through protection is
integrated to prevent both the upper and lower MOSFETs
from conducting simultaneously and to minimize the dead
time. The ISL6615 includes an overvoltage protection
feature operational before VCC exceeds its turn-on
threshold, at which the PHASE node is connected to the
gate of the low side MOSFET (LGATE). The output voltage
of the converter is then limited by the threshold of the low
side MOSFET, which provides some protection to the load if
the upper MOSFET(s) is shorted.
The ISL6615 also features an input that recognizes a
high-impedance state, working together with Intersil
multiphase PWM controllers to prevent negative transients
on the controlled output voltage when operation is
suspended. This feature eliminates the need for the Schottky
diode that may be utilized in a power system to protect the
load from negative output voltage damage.
®
1
Data Sheet
1-888-INTERSIL or 1-888-468-3774
CAUTION: These devices are sensitive to electrostatic discharge; follow proper IC Handling Procedures.
Features
• Dual MOSFET Drives for Synchronous Rectified Bridge
• Advanced Adaptive Zero Shoot-Through Protection
• Adjustable Gate Voltage for Optimal Efficiency
• 36V Internal Bootstrap Schottky Diode
• Bootstrap Capacitor Overcharging Prevention
• Supports High Switching Frequency (up to 1MHz)
• Support 3.3V PWM Input logic
• Tri-State PWM Input for Safe Output Stage Shutdown
• Tri-State PWM Input Hysteresis for Applications with
• Pre-POR Overvoltage Protection
• VCC Undervoltage Protection
• Expandable Bottom Copper PAD for Better Heat
• Dual Flat No-Lead (DFN) Package
• Pb-Free (RoHS Compliant)
Applications
• Optimized for POL DC/DC Converters for IBA Systems
• Core Regulators for Intel® and AMD® Microprocessors
• High Current Low-Profile DC/DC Converters
• High Frequency and High Efficiency VRM and VRD
• Synchronous Rectification for Isolated Power Supplies
Related Literature
Technical Brief TB363 “Guidelines for Handling and
Processing Moisture Sensitive Surface Mount Devices
(SMDs)”
Technical Brief TB389 “PCB Land Pattern Design and
Surface Mount Guidelines for QFN Packages”
- Body Diode Detection
- LGATE Detection
- Auto-zero of r
- 6A LGATE Sinking Current Capability
- Fast Rise/Fall Times and Low Propagation Delays
Power Sequencing Requirement
Spreading
- Near Chip-Scale Package Footprint; Improves PCB
Efficiency and Thinner in Profile
All other trademarks mentioned are the property of their respective owners.
April 24, 2008
|
Intersil (and design) is a registered trademark of Intersil Americas Inc.
DS(ON)
Copyright Intersil Americas Inc. 2008. All Rights Reserved
Conduction Offset Effect
ISL6615
FN6481.0

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ISL6615 Summary of contents

Page 1

... Intersil Digital or Analog multiphase PWM controller, forms a complete high frequency and high efficiency voltage regulator. The ISL6615 drives both upper and lower gates over a range of 4.5V to 13.2V. This drive-voltage provides the flexibility necessary to optimize applications involving trade-offs between gate charge and conduction losses. ...

Page 2

... Pinouts ISL6615 (8 LD SOIC) TOP VIEW UGATE 1 BOOT 2 PWM 3 GND 4 Block Diagram VCC +5V 13.6k PWM 6.4k 2 ISL6615 TEMP. PART MARKING RANGE (° + +70 -40 to +70 -40 to +70 8 PHASE 7 PVCC 6 VCC 5 LGATE RECOMMEND TO CONNECT PIN 3 TO GND AND PIN 8 TO PVCC ISL6615 (UVCC) ...

Page 3

... Typical Application - 2 Channel Converter +5V +5V FB VCC VSEN PGOOD PWM CONTROL (ISL63xx OR ISL65xx) VID (OPTIONAL) FS/EN GND ISL6615 CAN SUPPORT 3. PWM INPUT V +7V TO +13.2V PVCC BOOT COMP VCC UGATE PWM PWM1 ISL6615 PWM2 PHASE LGATE GND ISEN1 +7V TO +13.2V V ISEN2 PVCC BOOT VCC UGATE ...

Page 4

... PVCC to 15V DC DC Recommended Operating Conditions < 36V)) BOOT-GND Ambient Temperature Range ISL6615CRZ, ISL6615CBZ . . . . . . . . . . . . . . . . . . . 0°C to +70°C ISL6615IRZ, ISL6615IBZ . . . . . . . . . . . . . . . . . . . .-40°C to +85°C Maximum Operating Junction Temperature +125°C VCC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . 6.8V to 13.2V PVCC Supply Voltage . . . . . . . . . . . . . . . . . . . . . . . 5V to 12V ±10% SYMBOL TEST CONDITIONS 300kHz, V ...

Page 5

... Connect this pin to the SOURCE of the upper MOSFET and the DRAIN of the lower MOSFET. This pin provides a return path for the upper gate drive PAD Connect this pad to the power ground plane (GND) via thermally enhanced connection. 5 ISL6615 SYMBOL TEST CONDITIONS 12V, 3nF Load, Adaptive PDHU ...

Page 6

... FL t PDLL Operation Designed for versatility and speed, the ISL6615 MOSFET driver controls both high-side and low-side N-Channel FETs of a half-bridge power train from one externally provided PWM signal. Prior to VCC exceeding its POR level, the Pre-POR overvoltage protection function is activated during initial start-up ...

Page 7

... FIGURE 2. BOOTSTRAP CAPACITANCE vs BOOT RIPPLE Gate Drive Voltage Versatility The ISL6615 provides the user with flexibility in choosing the gate drive voltage for efficiency optimization. The ISL6615 ties the upper and lower drive rails together. Simply applying a voltage from +4. 13.2V on PVCC sets both gate drive rail voltages simultaneously, while VCC’ ...

Page 8

... HI2 EXT2 LO2 R GI1 R R ------------- EXT1 G1 EXT2 ISL6615 PVCC (EQ • ⎞ Q2 • ⎟ FIGURE 3. TYPICAL UPPER-GATE DRIVE TURN-ON PATH ⎠ (EQ defined at a and the GS2 is the driver’s total Q1 FIGURE 4. TYPICAL LOWER-GATE DRIVE TURN-ON PATH ...

Page 9

... C /C ratio, as well as the gate-source GD GS threshold of the upper MOSFET. A higher dV/dt, a lower 9 ISL6615 C /C ratio, and a lower gate-source threshold upper DS GS FET will require a smaller resistor to diminish the effect of the internal capacitive coupling. For most applications, the integrated 20kΩ ...

Page 10

... D2 (DATUM B) D2 INDEX AREA (DATUM N (Nd-1)Xe REF. BOTTOM VIEW 0.415 NX (b) (A1) 5 SECTION "C-C" 10 ISL6615 L10.3x3 2X 0. LEAD DUAL FLAT NO-LEAD PLASTIC PACKAGE 2X 0. SYMBOL 0. 0. NOTES: 1. Dimensioning and trancing conform to ASME Y14.5-1994. ...

Page 11

... However, no responsibility is assumed by Intersil or its subsidiaries for its use; nor for any infringements of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of Intersil or its subsidiaries. For information regarding Intersil Corporation and its products, see www.intersil.com 11 ISL6615 M8.15 (JEDEC MS-012-AA ISSUE C) 8 LEAD NARROW BODY SMALL OUTLINE PLASTIC PACKAGE ...

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