TC55VCM416BTGN55LA Toshiba, TC55VCM416BTGN55LA Datasheet - Page 5

• Manufacturer Part Number: TC55VCM416BTGN55LA
• Description: IC SRAM 16MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VCM416BTGN55LA

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC55VCM416BTGN55LB

DC CHARACTERISTICS
CAPACITANCE
Note:
C
C
Note:
SYMBOL PARAMETER
I
I
I
I
I
I
I
I
IL
OH
OL
LO
DDO1
DDO2
DDS1
DDS2
IN
OUT
SYMBOL
In standby mode with
The other input pins are not restricted of input level.
This parameter is periodically sampled and is not 100% tested.
Input Leakage
Current
Output
High Current
Output
Low Current
Output
Leakage
Current
Operating
Current
Standby
Current
Input Capacitance
Output Capacitance
(Ta = 25°C, f = 1 MHz)
V
V
V
R/W = V
R/W = V
I
Other Input = V
CE2 = V
R/W = V
Other Input = V
1)
2) CE2 = 0.2 V
CE
CE
CE
CE
OUT
IN
OH
OL
PARAMETER
1
1
1
1
CE2 = V
CE = V
CE ≥ V
= 0 V~V
= 0.4 V
= V
= 0 mA,
= V
= V
= 0.2 V and
= V
1
1
(Ta = −40° to 85°C, V
DD
IL
IH
DD
DD
IH
IL
IH
TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
or OE = V
DD
DD
DD
and CE2 = V
− 0.2 V and
− 0.2 V, I
− 0.5 V
DD
or CE2 = V
or CE2 = V
− 0.2 V,
−
IH
DD
− 0.2 V
TEST CONDITION
/V
0.2 V, these limits are assured for the condition CE2 ≥ V
− 0.2 V/0.2 V
IL
OUT
IH
IL
IL
, V
V
2.3~3.6 V
V
V
1.65~2.2 V
V
IH
DD
DD
DD
DD
or LB = UB = V
= 0 mA,
OUT
and
=
= 3.0 V
=
= 1.8 V Ta = 25°C
= 0 V~V
V
V
IN
OUT
= GND
Ta = − 40~85°C
Ta = 25°C
Ta = − 40~40°C
Ta = − 40~85°C
DD
t
t
cycle
cycle
DD
= GND
= 2.3 to 3.6 V/1.65 to 2.2 V)
TEST CONDITION
IH
MIN
1 μ s
MIN
1 μ s
or
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
− 0.5
MIN
2.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
TYP
0.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MAX
± 1.0
± 1.0
1.0
20
20
15
⎯
⎯
⎯
⎯
8
2
1
2
DD
TC55YCM416BSGN70
TC55YCM416BTGN70
TC55YEM416BXGN70
− 0.5
− 0.2 V or CE2 ≤ 0.2 V.
MIN
2005-08-09 5/18
2.1
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MAX
10
10
TYP
0.7
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
MAX
± 1.0
± 1.0
1.0
⎯
⎯
12
12
⎯
⎯
⎯
15
2
2
1
UNIT
pF
pF
UNIT
mA
mA
mA
mA
mA
μ A
μ A
μ A