TC55VCM416BTGN55LA Toshiba, TC55VCM416BTGN55LA Datasheet - Page 2

• Manufacturer Part Number: TC55VCM416BTGN55LA
• Description: IC SRAM 16MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VCM416BTGN55LA

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 16M (1M x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TC55VCM416BTGN55LB

PIN ASSIGNMENT
PIN NAMES
* : OP pin must be open or connected to GND.
48-pin Plastic TSOP(I) (12×20mm) (0.5mm pin pitch) (Normal bent)
48-pin Plastic TSOP(I) (12×14mm) (0.5mm pin pitch) (Normal bent)
48-ball BGA (8×11mm) (0.75mm ball pitch)
A
B
C
D
E
G
H
F
I/O1~I/O16
CE , CE2
LB , UB
A0~A19
I/O10
I/O15
I/O16
R/W
CE2
GND
GND
A15
A14
A13
A12
A10
A19
A18
A17
A11
I/O9
V
R/W
V
A18
OP*
1
NC
OP
LB
OE
NC
UB
A9
A8
LB
A7
A6
A5
A4
A3
A2
A1
1
DD
DD
TC55VCM416BTGN
TC55YCM416BTGN
TC55VCM416BSGN
TC55YCM416BSGN
TC55VEM416BXGN
TC55YEM416BXGN
I/O11
I/O12
I/O13
I/O14
A19
OE
UB
A8
2
Address Inputs
Chip Enable
Read/Write Control
Output Enable
Data Byte Control
Data Inputs/Outputs
Power
Ground
No Connection
Option
1
2
3
4
5
6
7
8
9
10
11
12
13
14
15
16
17
18
19
20
21
22
23
24
A17
A14
A12
OP
A0
A3
A5
A9
3
A16
A15
A13
A10
A1
A4
A6
A7
(TOP VIEW)
4
CE
I/O2
I/O4
I/O5
I/O6
R/W
A11
A2
5
1
GND
TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
CE2
I/O1
I/O3
V
I/O7
I/O8
NC
6
DD
48
47
46
45
44
43
42
41
40
39
38
37
36
35
34
33
32
31
30
29
28
27
26
25
A16
NC
GND
I/O16
I/O8
I/O15
I/O7
I/O14
I/O6
I/O13
I/O5
V
I/O12
I/O4
I/O11
I/O3
I/O10
I/O2
I/O9
I/O1
GND
A0
OE
CE1
DD
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