TC55VCM416BTGN55LA Toshiba, TC55VCM416BTGN55LA Datasheet

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TC55VCM416BTGN55LA

Manufacturer Part Number
TC55VCM416BTGN55LA
Description
IC SRAM 16MBIT 55NS 48TSOP
Manufacturer
Toshiba
Datasheet

Specifications of TC55VCM416BTGN55LA

Format - Memory
RAM
Memory Type
SRAM
Memory Size
16M (1M x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
TC55VCM416BTGN55LB

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC55VCM416BTGN55LA
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
1,048,576-WORD BY 16-BIT FULL CMOS STATIC RAM
DESCRIPTION
access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate
process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit
technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle
time of 55 ns. It is automatically placed in low-power mode at 0.7 μA standby current (at V
typical) when chip enable ( CE1 ) is asserted high or (CE2) is asserted low. There are three control inputs. CE1
and CE2 are used to select the device and for data retention control, and output enable ( OE ) provides fast memory
access. Data byte control pin ( LB , UB ) provides lower and upper byte access. This device is well suited to various
microprocessor system applications where high speed, low power and battery backup are required. And, with a
guaranteed operating extreme temperature range of − 40° to 85°C, the TC55VCM416B, TC55VEM416B,
TC55YCM416B and TC55YEM416B can be used in environments exhibiting extreme temperature conditions. The
TC55VCM416BTGN/BSGN, TC55YCM416BTGN/BSGN is available in a plastic 48-pin thin-small-outline package
(TSOP). The TC55VEM416BXGN, TC55YEM416BXGN is available in a plastic 48-ball BGA.
FEATURES
The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random
Low-power dissipation
Operating: 6 mW/MHz (typical)
Power down features using CE1 and CE2
Wide operating temperature range of − 40° to 85°C
Lead-Free
TC55VCM416BTGN55
TC55VCM416BSGN55
TC55VEM416BXGN55
TC55YCM416BTGN70
TC55YCM416BSGN70
TC55YEM416BXGN70
Part Number
Part Number
TOSHIBA MOS DIGITAL INTEGRATED CIRCUIT SILICON GATE CMOS
1.65~2.2 V
Operating
2.3~3.6 V
Operating
Voltage
Voltage
Supply
Supply
TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55
TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
48-pin Plastic TSOP(I)
(12×14mm) (0.5mm pin pitch)
(Normal bent)
48-ball BGA
(8×11mm) (0.75mm ball pitch)
48-pin Plastic TSOP(I)
(12×20mm) (0.5mm pin pitch)
(Normal bent)
48-pin Plastic TSOP(I)
(12×14mm) (0.5mm pin pitch)
(Normal bent)
48-ball BGA
(8×11mm) (0.75mm ball pitch)
Package
Package
2.7~3.6 V
1.8~2.2 V
Voltage
Voltage
Supply
Supply
55 ns
55 ns
55 ns
70 ns
70 ns
70 ns
Access time
Access time
(MAX)
(MAX)
1.65~2.2 V
2.3~3.6 V
Voltage
Voltage
Supply
Supply
70 ns
70 ns
70 ns
85 ns
85 ns
85 ns
Operating
Operating
(MAX)
20 mA
(MAX)
15 mA
Supply Current
Supply Current
At
At
2005-08-09 1/18
DD
Standby
Standby
(MAX)
(MAX)
= 3 V, Ta = 25°C,
15 μA
15 μA
At
At
Lead-Free
Retention
1.5~3.6 V
Retention
1.0~2.2 V
At Data
At Data

Related parts for TC55VCM416BTGN55LA

TC55VCM416BTGN55LA Summary of contents

Page 1

... DESCRIPTION The TC55VCM416B, TC55VEM416B, TC55YCM416B and TC55YEM416B is a 16,777,216-bit static random access memory (SRAM) organized as 1,048,576 words by 16 bits. Fabricated using Toshiba's CMOS Silicon gate process technology, this device operates from a single 2.3 to 3.6 V/1.65 to 2.2 V power supply. Advanced circuit technology provides both high speed and low power at an operating current of 2 mA/MHz and a minimum cycle time automatically placed in low-power mode at 0.7 μ ...

Page 2

PIN ASSIGNMENT (TOP VIEW) 48-pin Plastic TSOP(I) (12×20mm) (0.5mm pin pitch) (Normal bent) TC55VCM416BTGN TC55YCM416BTGN 48-pin Plastic TSOP(I) (12×14mm) (0.5mm pin pitch) (Normal bent) TC55VCM416BSGN TC55YCM416BSGN A15 1 A14 2 A13 3 A12 4 A11 5 A10 ...

Page 3

... I/O10 I/O11 I/O12 I/O13 I/O14 I/O15 I/O16 R CE2 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 MEMORY CELL ARRAY 4,096 × 128 × 16 × 2Bank (16,777,216) SENSE AMP COLUMN ADDRESS DECODER COLUMN ADDRESS REGISTER COLUMN ADDRESS BUFFER CLOCK GENERATOR A11 A13 A15 A19 ...

Page 4

OPERATING MODE MODE CE 1 CE2 L H Read Write Output Deselect Standby don't care H = logic ...

Page 5

V DC CHARACTERISTICS SYMBOL PARAMETER Input Leakage = 0 V Current Output = High Current Output = 0 Low Current ...

Page 6

AC CHARACTERISTICS AND OPERATING CONDITIONS READ CYCLE SYMBOL PARAMETER t Read Cycle Time RC t Address Access Time ACC t Chip Enable Access Time 1 CO1 t Chip Enable(CE2) Access Time CO2 t Output Enable Access Time OE ...

Page 7

AC CHARACTERISTICS AND OPERATING CONDITIONS READ CYCLE SYMBOL PARAMETER t Read Cycle Time RC t Address Access Time ACC t Chip Enable Access Time 1 CO1 t Chip Enable(CE2) Access Time CO2 t Output Enable Access Time OE ...

Page 8

V AC TEST CONDITIONS PARAMETER High Input pulse level Low t Input rise and fall time R (Fig. Timing measurements Reference level Output load (Fig. Fig.1 : ...

Page 9

TIMING DIAGRAMS READ CYCLE Address A0~A19 CE 1 CE2 OUT Hi-Z I/O1~16 WRITE CYCLE 1 (R/W CONTROLLED) Address A0~A19 R CE2 OUT I/O1~ I/O1~16 TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 ...

Page 10

TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 CE1 WRITE CYCLE 2 ( CONTROLLED) Address A0~A19 CE2 OUT Hi-Z I/O1~ I/O1~16 WRITE CYCLE 3 (CE2 CONTROLLED) Address A0~A19 t AS R/W ...

Page 11

UB LB WRITE CYCLE Address A0~A19 R CE2 OUT I/O1~ I/O1~16 Note: ・ Read cycle R/W remains HIGH for the read cycle. ・ Write cycle1 (1) If CE1 (or ...

Page 12

DATA RETENTION CHARACTERISTICS ( SYMBOL PARAMETER V Data Retention Supply Voltage Standby Current V DDS2 Chip Deselect to Data Retention Mode Time CDR ...

Page 13

MARKING (Example) TC55VCM416BTGN/TC55YCM416BTGN Family 1pin TC55VCM416BSGN/TC55YCM416BSGN Family 1pin TC55VEM416BXGN/TC55YEM416BXGN Family EXPLANATION △ : Operating supply voltage (V Speed version ○○○○○○ : Key code □□□□□□□ : Lot code Control code Week code Year code TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, ...

Page 14

PACKAGE DIMENSIONS TSOP Ⅰ 48-P-1220-0. Weight:0.510 g (typ) TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 18.4 0.1 20.0 0.2 Unit: 1.0 0.1 0.1 0.05 1.2max 0.5 0.1 2005-08-09 14/18 ...

Page 15

PACKAGE DIMENSIONS TSOP Ⅰ 48-P-1214-0. Weight:0.353 g (typ) TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 48 25 12.4 0.1 14.0 0.2 Unit:mm 1.0 0.1 0.1 0.05 1.2max 0.5 0.1 2005-08-09 15/18 ...

Page 16

PACKAGE DIMENSIONS P-TFBGA48-0811-0.75BZ Weight:0.154 g (typ) TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 11.0 0 0. 0.75 2.875 ...

Page 17

REVISION HISTORY Revision Page Draft Date After Before TC55VCM416BTGN, TC55VCM416BSGN, TC55VEM416BXGN55 TC55YCM416BTGN, TC55YCM416BSGN, TC55YEM416BXGN70 Type Passage Content 2005-08-09 17/18 ...

Page 18

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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