TE28F800C3BD70 Intel, TE28F800C3BD70 Datasheet - Page 49

• Manufacturer Part Number: TE28F800C3BD70
• Description: IC FLASH 8MBIT 70NS 48TSOP
• Manufacturer: Intel

Specifications of TE28F800C3BD70

• Format - Memory: FLASH
• Memory Type: Advanced + Boot Block FLASH
• Memory Size: 8M (512K x 16)
• Speed: 70ns
• Interface: Parallel
• Voltage - Supply: 2.7 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: 868489

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8.5
8.6
Datasheet
Figure 11. AC Input/Output Reference Waveform
Figure 12. Transient Equivalent Testing Load Circuit
Table 23. Test Configuration Component Values for Worst Case Speed Conditions
AC I/O Test Conditions
NOTE: Input timing begins, and output timing ends, at V
NOTE: See Table 17 for component values.
Device Capacitance
T
V
NOTE: C
A
C
C
§
Sampled, not 100% tested.
CCQ
IN
OUT
Symbol
= 25 °C, f = 1 MHz
Min Standard Test
Worst case speed conditions are when V
V
L
0V
CCQ
Test Configuration
includes jig capacitance.
Input
Output Capacitance
Input Capacitance
Parameter
V
CCQ
/2
Under Test
Device
§
Intel
CC
C
£
= V
Typ
L
6
8
Advanced+ Boot Block Flash Memory (C3)
50
(pF)
CC
CCQ
C
Min.
L
/2. Input rise and fall times (10% to 90%) < 5 ns.
V
CCQ
R
R
Max
12
1
2
8
R
Out
1
25
(k )
Unit
pF
pF
V
CCQ
/2
Output
V
V
Condition
OUT
R
IN
2
25
= 0.0 V
(k )
= 0.0 V
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