TE28F800C3BD70 Intel, TE28F800C3BD70 Datasheet - Page 24

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TE28F800C3BD70

Manufacturer Part Number
TE28F800C3BD70
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
Intel
Datasheet

Specifications of TE28F800C3BD70

Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
8M (512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
868489
查询"TE28F800C3TA70"供应商
Intel
24
Table 7.
£
Advanced+ Boot Block Flash Memory (C3)
Command Bus Operations
Bus operations are defined in
Read Array
Read Identifier
CFI Query
Read Status Register
Clear Status Register
Program
Block Erase/Confirm
Program/Erase Suspend
Program/Erase Resume
Lock Block
Unlock Block
Lock-Down Block
Protection Program
X = "Don’t Care"
SRD = Status Reg.
Data
NOTES:
1. Following the Read Identifier or CFI Query commands, read operations output device identification data or
2. Either 0x40 or 0x10 command is valid, but the Intel standard is 0x40.
3. When writing commands, the upper data bus [DQ8-DQ15] should be either V
CFI query information, respectively. See
draw.
Command
PA = Prog Addr
PD = Prog Data
Notes
1,3
1,3
1,3
1,3
1,3
2,3
1,3
1,3
1,3
1,3
1,3
1,3
1,3
Table 5, “Bus Operations” on page
Oper
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Write
Section 4.1.2
BA = Block Addr
First Bus Cycle
Addr
X
X
X
X
X
X
X
X
X
X
X
X
X
and
Section
0x40/
0xFF
0xB0
0xD0
0xC0
Data
0x90
0x98
0x70
0x50
0x10
0x20
0x60
0x60
0x60
IA
ID = Identifier Data
4.1.3.
Identifier Addr.
17.
Oper
Read
Read
Read
Write
Write
Write
Write
Write
Write
IL
or V
Second Bus Cycle
IH
, to minimize current
QA = Query Addr.
QD = Query Data
Addr
QA
PA
BA
BA
BA
BA
PA
IA
X
Datasheet
0xD0
Data
SRD
0x01
0x2F
D0H
QD
PD
PD
ID

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