TE28F800C3BD70 Intel, TE28F800C3BD70 Datasheet - Page 48

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TE28F800C3BD70

Manufacturer Part Number
TE28F800C3BD70
Description
IC FLASH 8MBIT 70NS 48TSOP
Manufacturer
Intel
Datasheet

Specifications of TE28F800C3BD70

Format - Memory
FLASH
Memory Type
Advanced + Boot Block FLASH
Memory Size
8M (512K x 16)
Speed
70ns
Interface
Parallel
Voltage - Supply
2.7 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
868489
查询"TE28F800C3TA70"供应商
Intel
8.4
48
Table 22. Reset Specifications
Figure 10. Reset Operations Waveforms
£
Advanced+ Boot Block Flash Memory (C3)
Reset Specifications
t
t
t
NOTES:
PLPH
PLRH1
PLRH2
1. If t
2. If RP# is asserted while a Block Erase or Word Program operation is not executing, the reset will complete
3. Sampled, but not 100% tested.
Symbol
within 100 ns.
PLPH
is < 100 ns the device may still reset but this is not guaranteed.
RP# Low to Reset during Read
(If RP# is tied to V
applicable)
RP# Low to Reset during Block Erase
RP# Low to Reset during Program
(A) Reset during Read Mode
(B) Reset during Program or Block Erase,
(C) Reset Program or Block Erase,
Parameter
RP# (P)
RP# (P)
RP# (P)
CC
, this specification is not
V
V
V
V
V
V
IH
IL
IH
IH
IL
IL
t
Complete
t
PLPH
PLRH
Abort
t
t
t
PLPH
PLPH
PLRH
Complete
Power-
Down
Deep
Abort
Notes
1, 2
t
t
t
PHQV
PHWL
PHEL
t
3
3
PLPH
t
t
t
t
t
t
PHQV
PHWL
PHEL
PHQV
PHWL
PHEL
>
t
PLPH
t
PLRH
V
Min
100
<
CC
t
PLRH
2.7 V – 3.6 V
Max
22
12
Datasheet
Unit
ns
µs
µs

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