TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 8
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TC55VBM316AFTN55
Manufacturer Part Number
TC55VBM316AFTN55
Description
IC SRAM 8MBIT 55NS 48TSOP
Manufacturer
Toshiba
Datasheet
1.TC55VBM316AFTN55.pdf
(15 pages)
Specifications of TC55VBM316AFTN55
Format - Memory
RAM
Memory Type
SRAM
Memory Size
8M (512K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC55W800FT-55(M)
TC55W800FT-55M
TC55W800FT5(M)
TC55W800FT5(MWR)
TC55W800FT5(Y)
TC55W800FT55(M)
TC55W800FT55(MWR)
TC55W800FT55M
TC55W800FT55MLA
TC55W800FT5M
TC55W800FT5M
TC55W800FT5Y
TC55W800FT5Y
TC55W800FT-55M
TC55W800FT5(M)
TC55W800FT5(MWR)
TC55W800FT5(Y)
TC55W800FT55(M)
TC55W800FT55(MWR)
TC55W800FT55M
TC55W800FT55MLA
TC55W800FT5M
TC55W800FT5M
TC55W800FT5Y
TC55W800FT5Y
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC55VBM316AFTN55
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
TOSHIBA
Quantity:
5 704
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
TOSHIBA
Quantity:
5 704
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
OKI
Quantity:
1 235
A0~A18 (Word Mode)
I/O1~16 (Word Mode)
A0~A18 (Word Mode)
I/O1~16 (Word Mode)
I/O1~16 (Word Mode)
A-1~A18 (Byte Mode)
A-1~A18 (Byte Mode)
I/O1~8 (Byte Mode)
I/O1~8 (Byte Mode)
I/O1~8 (Byte Mode)
READ CYCLE
WRITE CYCLE 1 (R/W CONTROLLED)
UB , LB
UB , LB
Address
Address
D
D
CE2
R/W
CE2
CE
OUT
CE
OUT
D
OE
IN
1
1
(See Note 1)
Hi-Z
t
AS
(See Note 2)
(See Note 5)
t
COE
t
OEE
t
ACC
t
t
CO1
CO2
t
BE
t
(See Note 4)
OE
t
BA
t
t
t
WC
ODW
RC
t
t
t
CW
CW
BW
TC55VBM316AFTN/ASTN40,55
t
WP
VALID DATA IN
VALID DATA OUT
t
DS
Hi-Z
t
OEW
t
DH
t
WR
t
BD
t
ODO
t
OD
t
OH
2002-08-05 8/15
(See Note 3)
(See Note 5)
Hi-Z