TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 11
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TC55VBM316AFTN55
Manufacturer Part Number
TC55VBM316AFTN55
Description
IC SRAM 8MBIT 55NS 48TSOP
Manufacturer
Toshiba
Datasheet
1.TC55VBM316AFTN55.pdf
(15 pages)
Specifications of TC55VBM316AFTN55
Format - Memory
RAM
Memory Type
SRAM
Memory Size
8M (512K x 16)
Speed
55ns
Interface
Parallel
Voltage - Supply
2.3 V ~ 3.6 V
Operating Temperature
-40°C ~ 85°C
Package / Case
48-TSOP
Lead Free Status / RoHS Status
Contains lead / RoHS non-compliant
Other names
TC55W800FT-55(M)
TC55W800FT-55M
TC55W800FT5(M)
TC55W800FT5(MWR)
TC55W800FT5(Y)
TC55W800FT55(M)
TC55W800FT55(MWR)
TC55W800FT55M
TC55W800FT55MLA
TC55W800FT5M
TC55W800FT5M
TC55W800FT5Y
TC55W800FT5Y
TC55W800FT-55M
TC55W800FT5(M)
TC55W800FT5(MWR)
TC55W800FT5(Y)
TC55W800FT55(M)
TC55W800FT55(MWR)
TC55W800FT55M
TC55W800FT55MLA
TC55W800FT5M
TC55W800FT5M
TC55W800FT5Y
TC55W800FT5Y
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
TC55VBM316AFTN55
Manufacturer:
TOSHIBA/东芝
Quantity:
20 000
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
TOSHIBA
Quantity:
5 704
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
TOSHIBA
Quantity:
5 704
Company:
Part Number:
TC55VBM316AFTN55A
Manufacturer:
OKI
Quantity:
1 235
DATA RETENTION CHARACTERISTICS (
V
I
t
t
CE2 CONTROLLED DATA RETENTION MODE
UB LB
CE1
DDS2
CDR
R
DH
SYMBOL
,
UB , LB
CONTROLLED DATA RETENTION MODE
2.3 V
2.3 V
2.3 V
GND
GND
GND
CE
CONTROLLED DATA RETENTION MODE
V
V
V
V
V
V
V
DD
DD
DD
IH
IH
IH
1
IL
Data Retention Supply Voltage
Standby Current
Chip Deselect to Data Retention Mode Time
Recovery Time
V
V
CE2
V
DD
DD
DD
PARAMETER
V
V
(See Note 2)
(See Note 5)
DH
DH
t
CDR
t
t
CDR
CDR
3.6 V Ta
3.0 V
Ta
Ta
40~85°C
40~40°C
40~85°C
Ta
DATA RETENTION MODE
DATA RETENTION MODE
DATA RETENTION MODE
(See Note 3)
(See Note 1)
V
V
40° to 85°C
DD
DD
(See Note 4)
0.2 V
0.2 V
0.2 V
TC55VBM316AFTN/ASTN40,55
MIN
1.5
0
5
)
TYP
(See Note 2)
(See Note 5)
t
t
2002-08-05 11/15
R
R
t
R
MAX
3.6
10
2
5
UNIT
ms
ns
V
A