TC55VBM316AFTN55 Toshiba, TC55VBM316AFTN55 Datasheet - Page 3

• Manufacturer Part Number: TC55VBM316AFTN55
• Description: IC SRAM 8MBIT 55NS 48TSOP
• Manufacturer: Toshiba

Specifications of TC55VBM316AFTN55

• Format - Memory: RAM
• Memory Type: SRAM
• Memory Size: 8M (512K x 16)
• Speed: 55ns
• Interface: Parallel
• Voltage - Supply: 2.3 V ~ 3.6 V
• Operating Temperature: -40°C ~ 85°C
• Package / Case: 48-TSOP
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Other names: TC55W800FT-55(M); TC55W800FT-55M; TC55W800FT5(M); TC55W800FT5(MWR); TC55W800FT5(Y); TC55W800FT55(M); TC55W800FT55(MWR); TC55W800FT55M; TC55W800FT55MLA; TC55W800FT5M; TC55W800FT5M; TC55W800FT5Y; TC55W800FT5Y

OPERATING MODE
MAXIMUM RATINGS
DC RECOMMENDED OPERATING CONDITIONS (
Read
Write
Output Deselect
Standby
V
V
V
P
T
T
T
* : 2.0 V when measured at a pulse width of 20ns
V
V
V
V
* : 2.0 V when measured at a pulse width of 20ns
solder
stg
opr
DD
IN
I/O
D
DD
IH
IL
DH
SYMBOL
SYMBOL
* = don't care
H = logic high
L = logic low
MODE
Power Supply Voltage
Input Voltage
Input/Output Voltage
Power Dissipation
Soldering Temperature (10s)
Storage Temperature
Operating Temperature
Power Supply Voltage
Input High Voltage
Input Low Voltage
Data Retention Supply Voltage
CE
H
L
L
L
L
L
L
L
L
L
L
L
L
*
*
1
CE2
H
H
H
H
H
H
H
H
H
H
H
H
*
L
*
OE
H
H
H
H
L
L
L
L
*
*
*
*
*
*
*
PARAMETER
R/W
RATING
H
H
H
H
H
H
H
H
L
L
L
L
*
*
*
H or L
H or L
BYTE
H
H
H
H
H
H
H
H
H
H
L
L
L
V
V
DD
DD
LB
H
H
H
H
L
L
L
L
L
L
*
*
*
*
*
2.3 V~2.7 V
2.7 V~3.6 V
UB
H
H
H
H
*
L
L
*
L
L
*
L
L
*
*
Output
Output
High-Z
Output
Input
Input
High-Z
Input
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
I/O1~I/O8
Ta
TC55VBM316AFTN/ASTN40,55
MIN
2.3
2.0
2.2
1.5
0.3 *
40° to 85°C
High-Z
Output
Output
High-Z
High-Z
Input
Input
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
I/O9~I/O15
0.5~V
0.3 * ~4.2
VALUE
0.3~4.2
55~150
40~85
TYP
260
0.6
DD
)
0.5
A-1
Output
Output
High-Z
A-1
Input
Input
High-Z
A-1
High-Z
High-Z
High-Z
High-Z
High-Z
High-Z
V
V
2002-08-05 3/15
DD
DD
MAX
I/O16
3.6
3.6
0.24
0.3
POWER
UNIT
UNIT
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
°C
°C
°C
W
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDO
DDO
V
V
V
V
V
V
V
DDS
DDS
DDS